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參數(shù)資料
| 型號(hào)： | NEZ7785-8DD |
| 廠商： | NEC Corp. |
| 英文描述： | 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| 中文描述： | 4W/8W C波段砷化鎵場(chǎng)效應(yīng)管N溝道砷化鎵場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/18頁(yè) |
| 文件大小： | 108K |
| 代理商： | NEZ7785-8DD |
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1996
PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
DESCRIPTION
PACKAGE DIMENSIONS
(unit: mm)
The NEZ Series of microwave power GaAs FETs offer
high output power, high gain and high efficiency at C-band
for microwave and satellite communications.
Internal input and output circuits matched to 50
are
designed to provide good flatness of gain and output power
in allocated band.
To reduce the thermal resistance, the device has a PHS
(Plated Heat Sink) structure.
NEC’s strigent quality assurance and test procedures
guarantee the highest reliability and performance.
SELECTION CHART
NEZ PART NUMBER
FREQUENCY BAND (GHz)
NEZ3642-4D, 8D, 8DD
3.6 to 4.2
NEZ4450-4D, 4DD/8D, 8DD
4.4 to 5.0
NEZ5964-4D, 4DD/8D, 8DD
5.9 to 6.45
NEZ6472-4D, 4DD/8D, 8DD
6.4 to 7.2
NEZ7177-4D, 4DD/8D, 8DD
7.1 to 7.7
NEZ7785-4D, 4DD/8D, 8DD
7.7 to 8.5
FEATURES
Internally matched to 50
High power output
High linear gain
High reliability
Low distortion
Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
4W/8W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
0.5
±
0.1
GATE
C1.5 4PLACES
SOURCE
R1.6 2PLACES
6
±
0
DRAIN
17.0
±
0.2
21.0
±
0.3
3
1
±
0
2
2
2.4
10.7
12.0
0
+
2
±
0
1
5
0
–
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NEZ7785-8DL | 制造商:NEC Electronics Corporation 功能描述:7785-8DL |
| NEZ-8B | 制造商:NEC 制造商全稱:NEC 功能描述:C-BAND POWER GAAS MESFET |
| NEZ-8BD | 制造商:NEC 制造商全稱:NEC 功能描述:C-BAND POWER GAAS MESFET |
| NEZSK204Z3.3VH26.8X1.4F | 制造商:NIC Components Corp 功能描述: |
| NEZVL224Z5.5V12.5X10.5F | 制造商:NIC Components Corp 功能描述: |
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