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參數(shù)資料
| 型號： | NESG2021M16-T3 |
| 廠商： | California Micro Devices Corporation |
| 英文描述： | NECs NPN SiGe HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 鄰舍npn型硅鍺高頻晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 224K |
| 代理商： | NESG2021M16-T3 |
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm
2
x 1.0 mm (t) glass epoxy PCB.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
13.0
V
CEO
Collector to Emitter Voltage
V
5.0
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
35
P
T
2
Total Power Dissipation
mW
175
T
J
Junction Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
NESG2021M16
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M16
6-PIN LEAD-LESS MINIMOLD
0
0
+
-
0
0
0
0
1
+
-
0.8
+0.07
-0.05
1.0±0.05
1
2
3
6
5
4
z
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
ORDERING INFORMATION
PART NUMBER
QUAN-
TITY
SUPPLYING FORM
NESG2021M16-T3-A
10 K pcs
reel
Pin 1 (Collector), Pin 6
(Emitter) face the perfora-
tion side of the tape
4. Base
5. Emitter
6. Emitter
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
11/13/2003
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