參數(shù)資料
型號: NES1823P-45
廠商: NEC Corp.
英文描述: 45 W L, S-BAND PUSH-PULL POWER GaAs MES FET
中文描述: 45冊,S波段推拉功率GaAs場效應晶體管
文件頁數(shù): 3/20頁
文件大小: 154K
代理商: NES1823P-45
Preliminary Data Sheet
3
NES1823P-100
TYPICAL CHARACTERISTICS (T
A
= +25°C)
POWER MATCHING AND IM
3
MATCHING
NEC produces two type matching circuits, power matching and IM
3
matching. Power matching circuit is used our
production line. And the IM
3
matching circuit is useful for the customers to design the special tuning application. The
power matching is designed as this, input impedance is gain-matching, output is matched with power matching
impedance which is calculated with large signal simulation model. The IM
3
matching is designed as this, input
impedance is matched to the impedance which has the direction of decreasing S
21
phase-shift, output impedance is
matched to the almost same as the efficiency matching impedance. Those typical RF data are shown as this, G
L
=
10.2 dB P
out
= 50.0 dBm IM
3
= –28 dBc at power matching, G
L
= 10.0 dB P
out
= 49.3 dBm IM
3
= –31 dBc at IM
3
matching (@2 tone P
out
= 40 dBm).
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