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參數(shù)資料
| 型號： | NESG2021M16 |
| 廠商： | California Micro Devices Corporation |
| 英文描述： | NECs NPN SiGe HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 鄰舍npn型硅鍺高頻晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 224K |
| 代理商： | NESG2021M16 |
NESG2021M16
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
DESCRIPTION
NEC's NESG2021M16 is fabricated using NECs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
California Eastern Laboratories
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF
= 0.9 dB at 2 GHz
NF
= 1.3 dB at 5.2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG
= 22.5 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
FEATURES
Notes:
1. MSG =
2. Collector to base capacitance when the emitter grounded.
3. Pulsed measurement, pulse width
≤
350
μ
s, duty cycle
≤
2 %.
S
21
S
12
PRELIMINARY DATA SHEET
PART NUMBER
PACKAGE OUTLINE
NESG2021M16
M16
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
dB
1.3
G
a
Associated Gain at V
CE
= 2 V, I
C
= 3 mA, f = 5.2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
dB
10.0
NF
Noise Figure at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
dB
0.9
1.2
G
a
Associated Gain at V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
SOPT
, ZL = Z
LOPT
dB
15.0
18.0
MSG
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
dB
20.0
22.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
dB
17.0
19.0
P
1dB
Output Power at 1dB Compression Point at
V
CE
= 3 V, I
CQ
= 12 mA, f = 2 GHz
dBm
9
OIP
3
Output 3rd Order Intercept Point at V
CE
= 3 V, I
CQ
= 12 mA, f = 2 GHz dBm
17
f
T
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
GHz
20
25
C
re
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
pF
0.1
0.2
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
nA
100
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
nA
100
h
FE
DC Current Gain
3
at V
CE
= 2 V, I
C
= 5 mA
130
190
260
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
D
R
M16
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|---|---|
| NESG2021M16-T3 | NECs NPN SiGe HIGH FREQUENCY TRANSISTOR |
| NESG2021M16-T3-A | NECs NPN SiGe HIGH FREQUENCY TRANSISTOR |
| NESG2030M04 | NONLINEAR MODEL |
| NESG2030M04-T2 | NPN SiGe HIGH FREQUENCY TRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NESG2021M16-A | 功能描述:射頻硅鍺晶體管 NPN High Frequency RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| NESG2021M16-T3 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans GP BJT NPN 5V 0.035A 6-Pin LeadLess Mini-Mold T/R |
| NESG2021M16-T3-A | 功能描述:射頻硅鍺晶體管 NPN High Frequency RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M04 | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
| NESG2030M04-A | 功能描述:射頻硅鍺晶體管 NPN SiGe High Freq RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風格: 封裝 / 箱體: 封裝:Reel |
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