參數(shù)資料
型號: NES2427P-45
廠商: NEC Corp.
英文描述: 45 W S-BAND PUSH-PULL POWER GaAs MES FET
中文描述: 45瓦S波段推拉功率GaAs場效應(yīng)晶體管
文件頁數(shù): 1/8頁
文件大?。?/td> 46K
代理商: NES2427P-45
PRELIMINARY DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14810EJ1V0DS00 (1st edition)
Date Published May 2000 NS CP(K)
Printed in Japan
N-CHANNEL GaAs MES FET
NES2427P-45
45 W S-BAND PUSH-PULL POWER GaAs MES FET
2000
DESCRIPTION
The NES2427P-45 is a 45 W push-pull type GaAs MES FET designed for high power transmitter applications for
WLL repeater and base station systems. It is capable of delivering 45 W of output power (CW) with high linear gain,
high efficiency and excellent distortion under the condition of 12 V operation. Its primary band is 2.4 to 2.7 GHz. The
device employs 0.9
μ
m Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for
superior performance, thermal characteristics, and reliability.
Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
Push-pull type N-channel GaAs MES FET
V
DS
= 12.0 V operation
High output power: P
out
= 45 W TYP.
High linear gain: G
L
= 11 dB TYP.
High power added efficiency:
η
add
= 41 % TYP. @ V
DS
= 12.0 V, I
Dset
= 4.0 A (total), f = 2.70 GHz
ORDERING INFORMATION (PLAN)
Part Number
Package
Supplying Form
NES2427P-45
T-86
ESD protective envelope
Remark
To order evaluation samples, consult your NEC sales representative.
Caution Please handle this device at static-free workstation, because this is an electrostatic
sensitive device.
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