參數(shù)資料
型號： NE94430
廠商： NEC Corp.
英文描述： NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
中文描述： NPN硅晶體管振蕩器和混合機
文件頁數(shù)： 6/8頁
文件大?。?/td> 58K
代理商： NE94430
TYPICAL COMMON BASE SCATTERING PARAMETERS
(TA = 25
°
C)
Coordinates in Ohms
Frequency in GHz
(V
CB
= 2.5 V, I
C
= 2.5 mA)
NE94430
V
CB
= 2.5 V, I
C
= 2.5 mA
FREQUENCY
(MHz)
50
100
200
400
600
800
1000
1500
2000
V
CB
= 3 V, l
C
= 5 mA
50
100
200
400
600
800
1000
1500
2000
50
100
200
400
600
800
1000
1500
2000
.866 178.6
.861
.859
.846 164.4
.836 156.6
.826 149.1
.819 141.5
.793 122.1
.738 103.2
1.834
1.840
1.833
1.818
1.799
1.749
1.687
1.443
1.132
-2.2
-5.3
-11.5
-24.6
-37.9
-51.7
-66.6
-105.4
-146.8
.001
.003
.006
.017
.030
.051
.073
.149
.235
16.5
92.7
107.3
122.3
123.9
123.8
123.2
112.3
99.3
0.999
1.000
1.003
1.017
1.037
1.057
1.074
1.090
1.018
-0.4
1.6
- 4.1
-9.1
-14.5
-20.4
-27.0
-45.9
-65.7
-0.097
-0.030
-0.320
-0.600
-0.670
-0.650
-0.610
-0.360
0.040
5.3
5.3
5.3
5.2
5.1
4.9
4.5
3.2
1.1
32.6
27.9
24.9
20.3
17.8
15.4
13.6
9.9
6.8
176.6
172.5
V
CE
= 3 V, I
C
= 10 mA
NE944 SERIES
S
11
S
21
S
12
S
22
K
S
21
(dB)
4.1
4.1
4.1
3.9
3.7
3.3
2.9
1.3
-0.7
MAG
1
(dB)
27.2
25.8
22.5
19.2
16.6
14.6
13.0
9.2
6.3
MAG
.622
.623
.622
.615
.604
.598
.592
.570
.543
ANG
178.7
176.6
172.6
164.8
157.0
149.4
141.9
124.2
107.4
MAG
1.602
1.599
1.601
ANG
-2.4
-5.5
-11.7
-25.0
-38.5
-52.0
-66.1
-102.4
-142.3
MAG
.001
.004
.009
.019 106.4
.033
.051
.070
.140
.215
ANG
60.6
101.3
101.2
MAG
0.996
0.999
1.004
1.015
1.038
1.047
1.061
1.076
1.024
ANG
-0.6
-1.6
-4.1
-9.4
-15.1
-21.2
-27.6
-45.6
-64.7
-0.104
-0.114
-0.280
-0.470
-0.610
-0.620
-0.620
-0.410
-0.010
1.567
1.525
1.467
1.395
1.166
0.923
111.8
112.8
113.7
106.9
97.1
.777
.771
.774
.767
.753
.741
.735
.710
.670
178.6
176.4
172.6
164.6
156.7
149.1
141.5
122.8
104.8
1.751
1.752
1.747
1.727
1.704
1.657
1.595
1.368
1.094
-2.2
-5.1
-11.2
-24.0
-36.9
-50.2
-64.5
-101.3
-141.3
.002
.002
.006
.017
.031
.049
.073
.144
.226
45.9
102.8
97.8
114.2
121.1
122.1
120.6
111.4
99.5
1.000
1.002
1.003
1.015
1.035
1.052
1.069
1.090
1.034
-0.5
-1.6
-4.1
-9.0
-14.2
-20.2
-26.5
-44.9
-64.1
-0.154
-0.400
-0.220
-0.520
-0.680
-0.680
-0.630
-0.430
-0.040
4.9
4.9
4.8
4.7
4.6
4.4
4.1
2.7
0.8
29.4
29.4
24.6
20.1
17.4
15.3
13.4
9.8
6.8
j50
j25
j10
0
-j10
-j25
-j50
-j100
j100
0
10
25
50
100
S
22
3 GHz
S
11
.05 GHz
S
11
3 GHz
S
22
.05 GHz
120
90
.25
60
30
150
180
-150
-120
-90
-60
-30
0
2.5
2
1.5
.1
.15
.2
1
S
12
3 GHz
.5
S
21
3 GHz
S
12
0.5 GHz
S
21
0.5 GHz
Note:
1. Gain Calculations:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
≤
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
相關PDF資料
PDF描述
NE94430-T2 NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
NE94433 NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
NE94433-T1B NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
NE960R200 0.2 W X, Ku-BAND POWER GaAs MES FET
NE961R200 0.2 W X, Ku-BAND POWER GaAs MES FET
相關代理商/技術參數(shù)
參數(shù)描述
NE94430-A 功能描述:射頻雙極小信號晶體管 NPN Silicon AMP Oscilltr Transist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE94430-T1 制造商:California Eastern Laboratories (CEL) 功能描述:NPN Silicon Amplifier and Oscillator Transistor
NE94430-T1-A 功能描述:射頻雙極小信號晶體管 NPN Silicon AMP Oscilltr Transist RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE94430-T2 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
NE94430-T44-A 功能描述:射頻混合器 RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube
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