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參數(shù)資料
| 型號： | NE856M23 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON TRANSISTOR |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NE856M23 |
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm
2
X 1.2 mm glass epoxy board.
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T2
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°
C
°
C
RATINGS
20
12
3
100
140
150
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
(408) 988-3500
Telex 34-6393
FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)
Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
2/09/2000
NE856M13
Collector Current, I
C
(mA)
D
F
FORWARD CURRENT GAIN vs.
COLLECTOR CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
V
CE
= 10 V
1 2 3 5 7 10 20 30 50
500
300
200
100
70
50
30
20
10
Collector to Emitter Voltage, V
CE
(V)
C
C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
20
40
60
80
0
2
4
8
10
12
6
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