參數(shù)資料
型號(hào): NE8500200
廠商: NEC Corp.
英文描述: 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
中文描述: 2瓦C波段砷化鎵場(chǎng)效應(yīng)管N溝道砷化鎵場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 48K
代理商: NE8500200
NE85002 SERIES
5
NE8500295-8
V
DS
= 10 V, I
DS
= 450 mA, V
GS
= –1.386 V, I
G
= 0.0 mA, R
G
= 1 k
FREQUENCY
GHz
S
11
S
21
S
12
S
22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
0.100
0.500
1.000
1.500
2.000
2.500
3.000
3.500
3.600
3.700
3.800
3.900
4.000
4.200
4.400
4.500
4.600
4.800
5.000
5.200
5.400
5.500
5.600
5.800
6.000
6.200
6.400
6.500
6.600
6.800
7.000
7.200
7.400
7.500
7.600
7.800
8.000
8.200
8.400
8.500
8.600
8.800
9.000
9.200
9.400
9.500
9.600
9.800
10.000
0.971
0.937
0.934
0.947
0.939
0.921
0.906
0.887
0.886
0.877
0.876
0.869
0.866
0.851
0.840
0.836
0.832
0.821
0.805
0.783
0.752
0.734
0.714
0.656
0.587
0.494
0.374
0.303
0.229
0.079
0.116
0.240
0.352
0.394
0.436
0.497
0.536
0.564
0.575
0.570
0.577
0.541
0.497
0.439
0.381
0.354
0.344
0.287
0.288
–54.8
–146.3
–174.0
170.9
158.3
153.8
145.4
137.0
135.1
133.2
131.3
128.9
126.2
121.7
116.7
113.9
111.6
105.7
98.8
91.8
83.9
80.2
76.1
67.3
57.4
45.8
31.5
23.5
13.6
–26.8
–152.8
–179.6
164.3
158.7
151.2
139.2
126.7
113.4
98.5
91.0
81.8
63.6
45.2
27.2
12.6
17.977
6.354
3.391
2.382
1.869
1.473
1.335
1.272
1.264
1.269
1.267
1.265
1.252
1.285
1.322
1.343
1.365
1.415
1.483
1.549
1.631
1.658
1.703
1.791
1.893
1.997
2.096
2.124
2.155
2.143
2.078
2.008
1.894
1.824
1.768
1.663
1.587
1.530
1.455
1.413
1.369
1.245
1.105
0.960
0.829
0.787
0.736
0.655
0.622
150.9
98.2
74.5
56.2
40.3
27.7
15.9
2.7
–0.2
–2.7
–5.6
–8.6
–11.1
–16.2
–22.3
–25.5
–29.0
–35.8
–43.6
–51.8
–60.6
–64.9
–70.0
–79.7
–90.6
–102.5
–116.3
–122.7
–129.9
–145.1
–159.4
–171.7
174.2
167.5
161.2
149.3
137.2
124.8
110.7
103.5
96.0
80.9
66.6
53.7
43.5
38.6
33.3
25.2
17.0
0.004
0.016
0.018
0.020
0.026
0.023
0.027
0.034
0.034
0.036
0.038
0.040
0.041
0.040
0.042
0.044
0.047
0.050
0.056
0.059
0.062
0.065
0.066
0.070
0.073
0.075
0.076
0.075
0.073
0.067
0.063
0.056
0.046
0.042
0.039
0.030
0.025
0.018
0.027
0.033
0.040
0.058
0.069
0.073
0.065
0.067
0.073
0.074
0.068
35.4
24.0
22.3
20.8
28.1
22.7
20.9
19.9
20.2
19.4
14.9
15.7
10.2
8.7
7.7
6.0
5.7
2.0
–4.1
–9.0
–16.2
–18.9
–23.4
–32.0
–41.5
–51.6
–63.3
–69.9
–76.8
–89.3
–101.5
–113.7
–126.4
–134.1
–142.6
–163.8
165.8
116.4
66.5
49.5
31.6
–0.7
–26.2
–47.4
–60.9
–59.8
–63.3
–83.8
–86.2
0.427
0.464
0.492
0.513
0.534
0.573
0.592
0.603
0.603
0.601
0.605
0.605
0.602
0.586
0.582
0.583
0.583
0.585
0.592
0.604
0.620
0.628
0.641
0.666
0.695
0.729
0.769
0.788
0.809
0.840
0.874
0.886
0.887
0.883
0.886
0.872
0.858
0.849
0.846
0.843
0.834
0.814
0.773
0.740
0.730
0.747
0.741
0.718
0.712
–155.9
–172.3
–178.9
177.4
173.3
169.5
168.1
165.7
165.0
164.4
163.0
161.8
160.3
159.0
156.6
155.2
154.3
152.1
149.2
146.3
144.1
142.8
141.5
139.5
138.7
136.6
134.6
133.4
132.3
129.0
125.7
123.0
118.2
115.9
113.5
108.6
102.2
94.9
86.0
81.5
76.1
67.1
59.8
54.6
53.4
51.7
49.9
47.3
46.8
3.8
–4.1
–19.2
–34.5
相關(guān)PDF資料
PDF描述
NE8500200-RG 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500295-4 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500295-6 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500295-8 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE851M13 NE851M13
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE8500200-RG 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500200-WB 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500295-4 功能描述:射頻GaAs晶體管 2W C Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE8500295-6 功能描述:射頻GaAs晶體管 2W C Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE8500295-8 功能描述:射頻GaAs晶體管 2W C Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: