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參數(shù)資料
| 型號(hào)： | NE8500200-RG |
| 廠商： | NEC Corp. |
| 英文描述： | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| 中文描述： | 2瓦C波段砷化鎵場效應(yīng)管N溝道砷化鎵場效應(yīng)晶體管 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 48K |
| 代理商： | NE8500200-RG |
NE85002 SERIES
6
CHIP HANDLING
DIE ATTACHMENT
Die attach can be accomplished with a Au-Sn (300
±
10 C) performs in a forming gas environment. Epoxy die
attach is not recommended.
BONDING
Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 - 8 % elongation) 30 microns or
less in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %.
Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be
kept within a 280 C _ 5 minute curve. If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment.
The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean
environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
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| NE8500295-6 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-8 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE8500200-WB | 制造商:NEC 制造商全稱:NEC 功能描述:2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-4 | 功能描述:射頻GaAs晶體管 2W C Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE8500295-6 | 功能描述:射頻GaAs晶體管 2W C Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE8500295-8 | 功能描述:射頻GaAs晶體管 2W C Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| NE850R599A | 功能描述:射頻GaAs晶體管 0.5W C-Band MESFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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