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參數資料
| 型號： | NE76084-SL |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET |
| 中文描述： | C到Ku波段低噪聲放大器N溝道砷化鎵場效應晶體管 |
| 文件頁數： | 8/12頁 |
| 文件大小： | 62K |
| 代理商： | NE76084-SL |
NE76084
8
RECOMMENDED SOLDERING CONDITIONS
The following conditions (see table below) must be met when soldering this product.
Please consult with our sales offices in case other soldering process is used, or in case soldering is done
under different conditions.
<TYPES OF SURFACE MOUNT DEVICE>
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Soldering process
Soldering conditions
Symbol
Infrared ray reflow
Peak package’s surface temperature: 230
°
C or below,
Reflow time: 30 seconds or below (210
°
C or higher),
Number of reflow process: 1, Exposure limit
*
: None
IR30-00
Partial heating method
Terminal temperature: 230
°
C or below,
Flow time: 10 seconds or below,
Exposure limit
*
: None
*
Exposure limit before soldering after dry-pack package is opened.
Storage conditions: 25
°
C and relative humidity at 65 % or less.
Note
Do not apply more than a single process at once, except for “Partial heating method”.
PRECAUTION
Avoid high static voltage and electric fields, because this device is MES FET with GaAs
shottky barrier gate.
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the Japanese low concerned.
Keep the law concerned and so on, especially in case of removal.
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