參數(shù)資料
型號(hào): NE699M01-T1
廠商: NEC Corp.
英文描述: NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
中文描述: npn型外延硅晶體管的微波高增益放大
文件頁數(shù): 6/6頁
文件大?。?/td> 50K
代理商: NE699M01-T1
NE699M01
TYPICAL SCATTERING PARAMETERS
(T
A
= 25
°
C)
NE699M01
V
CE
= 2 V, I
C
= 7 mA
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
(GHz)
0.100
0.250
0.400
0.600
0.800
1.000
1.200
1.400
1.600
1.800
2.000
2.500
3.000
3.500
4.000
4.500
5.000
MAG
0.792
0.743
0.658
0.552
0.471
0.421
0.397
0.389
0.393
0.403
0.418
0.460
0.495
0.525
0.549
0.569
0.589
ANG
-14.7
-37.2
-58.5
-83.5
-105.7
-125.7
-143.6
-158.8
-171.3
178.2
170.0
155.6
146.2
138.5
131.2
122.8
113.1
MAG
17.256
15.479
14.101
12.010
10.130
8.616
7.432
6.493
5.738
5.137
4.634
3.710
3.086
2.630
2.287
2.015
1.790
ANG
164.9
149.9
135.4
119.6
107.1
97.0
88.4
81.0
74.5
68.4
62.8
50.2
38.9
28.4
18.3
8.7
-0.7
MAG
0.012
0.027
0.038
0.048
0.054
0.058
0.061
0.063
0.065
0.067
0.070
0.077
0.087
0.099
0.114
0.131
0.150
ANG
78.8
67.6
57.9
48.8
43.0
39.5
37.5
36.7
36.5
37.0
37.6
40.2
42.5
43.9
44.0
42.8
40.5
MAG
0.939
0.882
0.794
0.683
0.593
0.525
0.476
0.440
0.415
0.397
0.386
0.378
0.393
0.423
0.462
0.505
0.549
ANG
-10.3
-24.0
-35.7
-47.5
-56.4
-63.4
-69.4
-74.9
-80.1
-85.5
-90.7
-104.1
-117.0
-128.4
-138.0
-145.7
-152.0
(dB)
31.6
27.6
25.7
24.0
22.8
21.7
20.9
20.1
19.5
17.6
16.3
14.2
12.8
11.8
11.2
11.4
10.8
0.23
0.23
0.31
0.43
0.55
0.67
0.77
0.87
0.96
1.04
1.10
1.19
1.21
1.17
1.09
1.01
0.92
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
K - 1
).
(
K
±
= S
11
S
22
- S
21
S
12
,
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K =
1 + |
| - |S
11
| - |S
22
|
2 |S
12
S
21
|
2
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
PRINTED IN USA ON RECYCLED PAPER -12/98
相關(guān)PDF資料
PDF描述
NE710 LOW NOISE Ku-K BAND GaAs MESFET
NE71000 LOW NOISE Ku-K BAND GaAs MESFET
NE71083-06 LOW NOISE Ku-K BAND GaAs MESFET
NE71083-07 LOW NOISE Ku-K BAND GaAs MESFET
NE71083-08 LOW NOISE Ku-K BAND GaAs MESFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE7 功能描述:CLAMP VINYL-DIPPED 7/16X3/8" RoHS:是 類別:線纜,導(dǎo)線 - 管理 >> 線夾和夾具 系列:NE 標(biāo)準(zhǔn)包裝:100 系列:TC 類型:C-夾 開口尺寸:0.79" L x 0.54" W x 0.67" H(20.1mm x 13.7mm x 17.0mm) 安裝類型:釘子 材質(zhì):聚丙烯 顏色:黑
NE-7 制造商:Richco 功能描述:
NE710 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE Ku-K BAND GaAs MESFET
NE71-0.2 制造商:SIPAT 制造商全稱:SIPAT 功能描述:GSM Repeater
NE71000 制造商:NEC 制造商全稱:NEC 功能描述:LOW NOISE Ku-K BAND GaAs MESFET