參數(shù)資料
型號(hào)： NE688M03
廠商： NEC Corp.
英文描述： NPN SILICON TRANSISTOR
中文描述： NPN硅晶體管
文件頁(yè)數(shù)： 1/19頁(yè)
文件大?。?/td> 231K
代理商： NE688M03
PART NUMBER
1
EIAJ
2
REGISTERED NUMBER
PACKAGE OUTLINE
NE68818
2SC5194
18
NE68819
2SC5195
19
NE68830
2SC5193
30
NE68833
2SC5191
33
NE68839/39R
2SC5192/92R
39
SYMBOLS
f
T
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gain Bandwidth Product at
V
CE
= 1V, I
C
= 3 mA, f = 2.0 GHz
GHz
4
5
4.5
Gain Bandwidth Product at
V
CE
= 3V, I
C
= 20 mA, f = 2.0 GHz
GHz
10
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
dB
1.7
2.5
Minimum Noise Figure at
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
dB
1.5
Insertion Power Gain at
V
CE
= 1V, I
C
= 3 mA, f = 2.0 GHz
dB
3.0 4.0
3.0
Insertion Power Gain at
V
CE
= 3V, I
C
= 20 mA, f = 2.0 GHz
dB
8.5
Forward Current Gain
3
at
V
CE
= 1 V, I
C
= 3 mA
80
160
80
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
nA
100
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
nA
100
Feedback Capacitance at
V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
pF
0.65
0.8
Total Power Dissipation
mW
150
Thermal Resistance
(Junction to Ambient)
°
C/W
833
Thermal Resistance(Junction to Case)
°
C/W
3. Pulsed measurement, PW
≤
350
μ
s, duty cycle
≤
2%.
4. The emitter terminal should be connected to the ground terminal of
the 3 terminal capacitance bridge.
2. Electronic Industrial Association of Japan.
5
4
4.5
4
4.5
4
4.5
f
T
9.5
9
8.5
9
NF
MIN
1.7
2.5
1.7
2.5
1.7
2.5
1.7
2.5
NF
MIN
1.5
1.5
1.5
1.5
|S
21E
|
2
4.0
2.5
3.5
2.5
3.5
4.0
4.5
|S
21E
|
2
8
6.5
6.5
9
h
FE
160
80
160
80
160
80
160
I
CBO
100
100
100
100
I
EBO
100
100
100
100
C
RE4
0.7
0.8
125
0.75 0.85
0.75 0.85
0.65
0.8
200
P
T
150
200
R
TH(J-A)
1000
833
625
625
R
TH(J-C)
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE688
SERIES
FEATURES
LOW PHASE NOISE DISTORTION
LOW NOISE:
1.5 dB at 2.0 GHz
LOW VOLTAGE OPERATION
LARGE ABSOLUTE MAXIMUM COLLECTOR
CURRENT:
I
C
MAX = 100 mA
AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
ALSO AVAILABLE IN CHIP FORM
age styles, and in chip form.
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
33 (SOT 23 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
39R (SOT 143R STYLE)
DESCRIPTION
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
California Eastern Laboratories
18 (SOT 343 STYLE)
from this datasheet are not
from this datasheet are not
from this datasheet are not
from this datasheet are not
from this datasheet are not
details:
details:
details:
details:
Please call sales office for
Please call sales office for
Please call sales office for
Please call sales office for
Please call sales office for
The NE688 series of NPN epitaxial silicon transistors are
designed for low cost amplifier and oscillator applications. Low
noise figures, high gain and high current capability equate to
wide dynamic range and excellent linearity. NE688's low
phase noise distortion and high fT make it an excellent choice
for oscillator applications up to 5 GHz. The NE688 series is
available in six different low cost plastic surface mount pack-
相關(guān)PDF資料
PDF描述
NE688M23 NPN SILICON TRANSISTOR
NE68939 NPN SILICON EPITAXIAL TRANSISTOR
NE68939-T1 NPN SILICON EPITAXIAL TRANSISTOR
NE69039 NPN SILICON EPITAXIAL TRANSISTOR
NE69039-T1 NPN SILICON EPITAXIAL TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE688M03-A 功能描述:射頻雙極小信號(hào)晶體管 NPN Low Noise RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE688M03-T1-A 功能描述:射頻雙極小信號(hào)晶體管 NPN Low Noise RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE688M13 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON TRANSISTOR
NE688M23 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON TRANSISTOR
NE68939 功能描述:射頻雙極小信號(hào)晶體管 NPN Low Voltage RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*