參數(shù)資料
型號(hào)： NE68739-T1
廠商： NEC Corp.
英文描述： SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： 表面貼裝NPN硅高頻晶體管
文件頁數(shù)： 1/21頁
文件大?。?/td> 196K
代理商： NE68739-T1
PART NUMBER
1
EIAJ
2
REGISTERED NUMBER
PACKAGE OUTLINE
DESCRIPTION
from this datasheet are not
The following part numbers
HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 13 GHz
AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
The following part numbers
The following part numbers
The following part numbers
The following part numbers
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
recommended for new design.
NE68739
NE68739R
NE68718
2SC5185
18
NE68719
2SC5186
19
NE68730
2SC5184
30
NE68733
2SC5182
33
NE68739/39R
2SC5183/83R
39/39R
SYMBOLS
f
T
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gain Bandwidth Product at
V
CE
= 2 V, I
C
= 20 mA, f = 2.0 GHz
GHz
10
13
9
Gain Bandwidth Product at
V
CE
= 1 V, I
C
= 10 mA, f = 2.0 GHz
GHz
8
11
7
Minimum Noise Figure at
V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
dB
1.3
2.0
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
dB
1.3
2.0
Insertion Power Gain at
V
CE
= 2V, I
C
=20 mA, f = 2.0 GHz
dB
8
11
8.5
Insertion Power Gain at
V
CE
= 1V, I
C
=10 mA, f = 2.0 GHz
dB
7.5
9
6
Forward Current Gain
3
at
V
CE
= 2 V, I
C
= 20 mA
70
140
70
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
nA
100
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
nA
100
Feedback Capacitance at
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
pF
0.3
0.6
Total Power Dissipation
mW
90
Thermal Resistance
(Junction to Ambient)
°
C/W
833
Thermal Resistance
(Junction to Case)
°
C/W
3. Pulsed measurement, PW
≤
350
μ
s, duty cycle
≤
2%.
4. The emitter terminal should be connected to the ground terminal
11
9
11
9
12
7.5
10
f
T
9
7
9
7
10
7
8.5
NF
MIN
1.3
2.0
1.3
2.0
1.3
2.0
1.3
2.0
NF
MIN
1.3
2.0
1.3
2.0
1.3
2.0
1.3
2.0
|S
21e
|
2
10
7
8.5
7
8.5
7.5
10
|S
21e
|
2
7.5
6
7.5
6
7.5
7
8.5
h
FE
140
70
140
70
140
70
140
I
CBO
100
100
100
100
I
EBO
100
100
100
100
C
RE4
0.4
0.8
90
0.4
0.8
90
0.4
0.8
90
0.4
0.8
90
P
T
R
TH(J-A)
1250
833
625
625
R
TH(J-C)
SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
NE687
SERIES
FEATURES
30 (SOT 323 STYLE)
18 (SOT 343 STYLE)
39 (SOT 143 STYLE)
33 (SOT 23 STYLE)
19 (3 PIN ULTRA SUPER
MINI MOLD)
39R (SOT 143R STYLE)
The NE687 series of NPN epitaxial silicon transistors are
designed for low cost, low noise applications. Excellent perfor-
mance at low voltage/low current makes this series an ideal
choice for portable wireless applications at 1.6, 1.9 and 2.4
GHz. The NE687 die is available in six different low cost plastic
surface mount package styles.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
LOW NOISE:
1.3 dB AT 2.0 GHz
LOW VOLTAGE OPERATION
EASY TO MATCH
Notes:
1. Precaution: Devices are ESD sensitive. Use proper handling procedures.
2. Electronic Industrial Association of Japan.
California Eastern Laboratories
of the 3 terminal capacitance bridge.
相關(guān)PDF資料
PDF描述
NE6873939R SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68739R-T1 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
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NE68819 NONLINEAR MODEL
NE699M01 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE687M03 功能描述:射頻雙極小信號(hào)晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE687M03-A 功能描述:射頻雙極小信號(hào)晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE687M03-T1 功能描述:射頻雙極小信號(hào)晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE687M03-T1-A 功能描述:射頻雙極小信號(hào)晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE687M13 功能描述:射頻雙極小信號(hào)晶體管 NPN Lo Noise Hi Gain RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
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