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參數(shù)資料
| 型號(hào)： | NE68039-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | 鄰舍NPN硅高頻晶體管 |
| 文件頁數(shù)： | 3/19頁 |
| 文件大?。?/td> | 246K |
| 代理商： | NE68039-T1 |
NE680 SERIES
MAG
|S
21
|
2
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
30
25
20
15
10
5
0
I
2
|
2
(
M
I
2
|
2
(
1 2 3 5 7 10 20 30 50 70 100
14
13
12
11
10
9
8
7
6
5
4
3
2
V
CE
= 6 V
f = 2 GHz
f = 3 GHz
f = 4 GHz
Collector Current, I
C
(mA)
1 2 3 5 7 10 20 30 50 70 100
12
10
8
6
4
2
0
NE68033
V
CE
= 6 V
f = 2 GHz
I
2
|
2
(
I
2
|
2
(
M
NE68035
INSERTION GAIN vs.
COLLECTOR CURRENT
NE68033
INSERTION GAIN vs.
COLLECTOR CURRENT
NE68035
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
V
CBO
Collector to Base Voltage
V
CEO
Collector to Emitter Voltage
V
EBO
Emitter to Base Voltage
I
C
Collector Current
T
J
Junction Temperature
T
STG
Storage Temperature
UNITS
V
V
V
mA
°
C
°
C
RATINGS
20
10
1.5
35
150
2
-65 to +150
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Maximum T
J
for the NE68035 is 200
°
C.
DC POWER DERATING CURVES
Ambient Temperature, T
A
(
°
C)
T
T
(
NE68035
0 50 100 150 200
400
300
200
100
0
NE68033
NE68039
NE68019
Collector Current, I
C
(mA)
Frequency, f (GHz)
Frequency, f (GHz)
NE68039
FORWARD INSERTION GAIN
AND MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
|S
21
|
2
V
CE
= 6 V
I
C
= 10 mA
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
30
25
20
15
10
5
0
MAG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE68039R-T1 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE680M03 | NPN SILICON TRANSISTOR |
| NE68518-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68519-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68530-T1 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE68039-T1-A | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| NE680M03 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON TRANSISTOR |
| NE681 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68100 | 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE68118 | 功能描述:射頻雙極小信號(hào)晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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