參數(shù)資料
型號： NE68039-T1
廠商： NEC Corp.
英文描述： NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
中文描述： 鄰舍NPN硅高頻晶體管
文件頁數(shù)： 2/19頁
文件大?。?/td> 246K
代理商： NE68039-T1
NE680 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
f
T
NF
Gain Bandwidth Product at V
CE
= 6 V, I
C
= 10 mA
Noise Figure at V
CE
= 6 V, I
C
= 5 mA, f = 1 GHz
GHz
dB
dB
dB
10
10
1.6
1.8
10
1.7
1.9
f = 2 GHz
f = 4 GHz
1.7
2.6
2.4
3
GNF
Associated Gain at V
CE
= 6 V, I
C
= 5 mA,
f = 1 GHz
f = 2 GHz
f = 4 GHz
dB
dB
dB
14
10.2
13.5
9.6
12.5
8
MAG
Maximum Available Gain at V
CE
= 6 V, I
C
= 10 mA
f = 1 GHz
f = 2 GHz
f = 4 GHz
dB
dB
dB
18.5
16.2
10.2
19
12.7
8.2
18.5
11.8
7.3
|S
21E
|
2
Insertion Power Gain at V
CE
= 6 V, I
C
= 10 mA,
f = 1 GHz
f = 2 GHz
f = 4 GHz
dB
dB
dB
17
12.5
7.5
100
15.5
9.8
4.6
100
15
9.2
4.4
10.5
7.5
h
FE
Forward Current Gain
2
at V
CE
= 6 V, I
C
= 10 mA
50
250
50
250
V
CE
= 3 V, I
C
= 5 mA
80
160
1.0
1.0
0.7
100
1000
200
I
CBO
I
EBO
C
RE3
P
T
R
TH (J-A)
R
TH (J- C)
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0 mA
Emitter Cutoff Current at V
EB
= 1V, I
C
= 0 mA
Feedback Capacitance at V
CB
= 1 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
μ
A
μ
A
pF
mW
°
C/W
°
C/W
1.0
1.0
1.0
1.0
0.7
150
833
200
0.3
0.3
400
120
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE68000
NE68018
2SC5013
18
TYP
NE68019
2SC5008
19
TYP
00 (CHIP)
TYP
SYMBOLS
UNITS MIN
MAX
MIN
MAX
MIN
MAX
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE68030
2SC4228
30
NE68033
2SC3585
33
NE68035
2SC3587
35
NE68039/39R
2SC4095
39
SYMBOLS
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
f
T
NF
Gain Bandwidth Product at V
CE
= 6 V, I
C
= 10 mA
Noise Figure at V
CE
= 6 V, I
C
= 5 mA, f = 1 GHz
GHz
dB
dB
dB
10
1.5
1.7
2.9
10
1.6
1.8
2.1
10
10
f = 2 GHz
f = 4 GHz
3.0
1.7
2.6
2.4
1.7
2.6
2.5
GNF
Associated Gain at V
CE
= 6 V, I
C
= 5 mA,
f = 1 GHz
f = 2 GHz
f = 4 GHz
dB
dB
dB
12.5
9.4
5.3
11.0
9.0
4.2
12.5
8
11
6.5
MAG
Maximum Available Gain at V
CE
= 6 V, I
C
= 10 mA
f = 1 GHz
f = 2 GHz
f = 4 GHz
dB
dB
dB
17
10.9
6.8
17
10.9
6.7
18.5
16.2
10.2
18
12.4
8.7
|S
21E
|
2
Insertion Power Gain at V
CE
= 6 V, I
C
= 10 mA,
f = 1 GHz
f = 2 GHz
f = 2 GHz
dB
dB
dB
13.5
8.5
3.6
13
6.7
3.7
100
17
14.5
9.6
4.9
100
10.5 12.5
7.5
100
h
FE
Forward Current Gain
2
at V
CE
= 6 V, I
C
= 10 mA
50
250
50
250
50
250
V
CE
= 3 V, I
C
= 5 mA
50 100
250
1.0
1.0
I
CBO
I
EBO
Cre
3
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0 mA
Emitter Cutoff Current at V
EB
= 1V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 3V, I
E
= 0 mA, f = 1 MHz
V
CE
= 10 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
μ
A
μ
A
1.0
1.0
1.0
1.0
1.0
1.0
pF
pF
mW
°
C/W
°
C/W
0.3
0.7
0.3
0.8
200
620
200
0.2
0.7
290
550
200
0.25
0.8
200
620
200
P
T
150
833
200
R
TH (J-A)
R
TH (J- C)
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, PW
≤
350
μ
s, duty cycle
≤
2%.
3. The emitter terminal should be connected to the ground
terminal of the 3 terminal capacitance bridge.
相關PDF資料
PDF描述
NE68039R-T1 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE680M03 NPN SILICON TRANSISTOR
NE68518-T1 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68519-T1 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68530-T1 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
相關代理商/技術(shù)參數(shù)
參數(shù)描述
NE68039-T1-A 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
NE680M03 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON TRANSISTOR
NE681 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68100 制造商:NEC 制造商全稱:NEC 功能描述:NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
NE68118 功能描述:射頻雙極小信號晶體管 NPN High Frequency RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*