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參數(shù)資料
| 型號： | NE64535 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON LOW NOISE RF TRANSISTOR |
| 中文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | NE64535 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
I
CBO
V
CB
= 8 V
I
EBO
V
EB
= 1.0 V
h
FE
V
CE
= 8.0 V I
C
= 7.0 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
nA
μ
A
---
100
1.0
50
250
C
CB
V
CB
= 10 V
0.6
pF
f
t
V
CE
= 10 V I
C
= 20 mA f = 1.0 GHz
V
CE
= 8 V I
C
= 20 mA f = 2.0 GHz
8.0
8.5
GHz
S
21E
2
NF
GA
10
11
dB
V
CE
= 8 V I
C
= 10 mA f = 2.0 GHz
10
1.6
11
2.5
dB
NPN SILICON LOW NOISE RF TRANSISTOR
NE64535
DESCRIPTION:
The
ASI NE64535
is a Common
Emitter Device Designed for Low Noise
Class A Amplifier Applications up to 4.0
GHz.
FEATURES INCLUDE:
N
F
= 1.6 dB Typical @ 2 GHz
S
21E
2
= 11 dB Typical @ 2 GHz
Hermetic Ceramic Package
MAXIMUM RATINGS:
I
C
60 mA
V
CBO
25 V
V
CEO
12 V
V
EBO
1.5 V
P
DISS
300 mW @ T
A
≤
75
O
C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
85 °C/W
PACKAGE STYLE .085 4L SQ
1 = Collector 2 & 4 = Emitter 3 = Base
ORDER CODE: ASI10752
相關PDF資料 |
PDF描述 |
|---|---|
| NE645 | Dolby Noise Reduction Circuit |
| NE645N | Dolby Noise Reduction Circuit |
| NE646 | Dolby Noise Reduction Circuit |
| NE646N | Dolby Noise Reduction Circuit |
| NE64700 | NPN SILICON MICROWAVE TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NE64587 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 65MA I(C) | FO-102VAR |
| NE645N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dolby Noise Reduction Circuit |
| NE646 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dolby Noise Reduction Circuit |
| NE646N | 制造商:Panasonic Industrial Company 功能描述:I.C. |
| NE64700 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON MICROWAVE TRANSISTOR |
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