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參數(shù)資料
| 型號(hào)： | NE5510279A |
| 廠商： | NEC Corp. |
| 英文描述： | 3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS |
| 中文描述： | 3.5V的操作硅射頻功率MOSFET的GSM1800系統(tǒng)輸電功放 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 39K |
| 代理商： | NE5510279A |
NE5510279A
PERFORMANCE SPECIFICATIONS
(Peak measurement at Duty Cycle 1/8, 4.6 mS period, T
A
= 25C)
SYMBOLS
G
L
CHARACTERISTICS
Linear Gain
UNITS
dB
MIN
—
TYP
10.0
MAX
—
TEST CONDITIONS
f = 1.8 GHz, P
IN
= 10 dBm,
V
DS
= 3.5 V,I
DQ
= 400 mA
P
OUT(1)
Output Power
dBm
31.0
32.0
—
f = 1.8 GHz, P
IN
= 25 dBm,
I
OP(1)
η
ADD(1)
P
OUT(2)
Operating Current
mA
—
810
—
V
DS
= 3.5 V,I
DQ
= 400 mA
Power Added Efficiency
%
37
45
Maximum Output Power
dBm
—
32.6
—
f = 1.8 GHz, P
IN
= 25 dBm
I
OP(2)
Operating Current
mA
—
1,000
—
V
DS
= 3.5 V,V
GS
= 2.5 V
P
OUT(3)
Output Power at Lower Voltage
dBm
—
31.1
—
f = 1.8 GHz, P
IN
= 25 dBm
I
OP(3)
Operating Current
mA
—
880
—
V
DS
= 2.8 V,V
GS
= 2.5 V
G
L
Linear Gain
dB
—
10.0
—
f = 1.8 GHz, P
IN
= 10 dBm,
V
DS
= 4.8 V,I
DQ
= 400 mA
P
OUT
Output Power
dBm
—
35.0
—
f = 1.8 GHz, P
IN
= 28 dBm,
I
OP
η
ADD
G
L
Operating Current
mA
—
1,120
—
V
DS
= 4.8 V,I
DQ
= 400 mA
Power Added Efficiency
%
—
48
—
Linear Gain
dB
35.0
35.0
35.0
f = 1.8 GHz, P
IN
= 10 dBm,
V
DS
=6.0 V,I
DQ
= 400 mA
P
OUT
Output Power
dBm
37.0
f = 1.8 GHz, P
IN
= 30 dBm,
I
OP
η
ADD
Operating Current
mA
1,400
V
DS
=6.0 V,I
DQ
= 400 mA
Power Added Efficiency
%
49
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
V
DS
V
GS
I
D
I
D
P
IN
P
T
T
CH
T
STG
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current
Drain Current (Pulse Test)
2
Input Power
3
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
A
A
dBm
W
°
C
°
C
RATINGS
8.5
6
1.0
2.0
30
2.4
125
-55 to +125
SYMBOLS
V
DS
V
GS
I
D
P
IN
f
T
OP
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current (Pulse Test)
Input Power
Operating Frequency Range
Operating Temperature
TEST CONDITIONS
UNITS
V
V
A
dBm
GHz
C
MIN
2.8
0
—
24
1.6
-30
TYP
3.5
2.0
—
25
—
25
MAX
6.0
2.5
1.5
26
2.0
85
Duty Cycle 50%, Ton1ms
Frequency = 1.8 GHz, V
DS
= 3.5 V
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, t
on
=
1 ms.
3. Frequency = 1.8 GHz, V
DS
= 3.5 V.
PART NUMBER
QTY
NE5510279A-T1
1 Kpcs/Reel
ORDERING INFORMATION
Note:
Embossed tape 12 mm wide. Gate pin faces perforation side of the
tape.
RECOMMENDED OPERATING CONDITIONS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE5510279A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS |
| NE5510279A-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF POWER TRANSISTOR LDMOS |
| NE5511279A | 功能描述:射頻MOSFET電源晶體管 RO 551-NE5511279A-A RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5511279A-A | 功能描述:射頻MOSFET電源晶體管 UHF Band RF Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| NE5511279A-T1 | 制造商:California Eastern Laboratories (CEL) 功能描述:Trans RF MOSFET N-CH 20V 3A 4-Pin Case 79A T/R |
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