參數(shù)資料
型號： NE3210S01
廠商： NEC Corp.
英文描述： Low Noise Amplifier N-Channel HJ-FET(低噪聲N溝道結(jié)型場效應(yīng)管)
中文描述： 低噪聲放大器N溝道黃建忠場效應(yīng)管（低噪聲?溝道結(jié)型場效應(yīng)管）
文件頁數(shù)： 8/16頁
文件大小： 62K
代理商： NE3210S01
Data Sheet P14067EJ2V0DS00
8
NE3210S01
AMPLIFIER PARAMETERS
V
DS
= 0 V, V
GS
= 0 V
FREQUENCY
MHz
GUmax
dB
GAmax
dB
|
S
21
|
dB
2
|
S
12
|
dB
2
K
Delay
nsec
Mason’s U
dB
G1
dB
G2
dB
2000.0000
2500.0000
3000.0000
3500.0000
4000.0000
4500.0000
5000.0000
5500.0000
6000.0000
6500.0000
7000.0000
7500.0000
8000.0000
8500.0000
9000.0000
9500.0000
10000.0000
10500.0000
11000.0000
11500.0000
12000.0000
12500.0000
13000.0000
13500.0000
14000.0000
14500.0000
15000.0000
15500.0000
16000.0000
16500.0000
17000.0000
17500.0000
18000.0000
–18.01
–15.58
–14.62
–13.19
–12.04
–10.79
–9.94
–8.97
–8.21
–7.41
–6.75
–6.16
–5.64
–5.17
–4.71
–4.13
–3.68
–2.85
–2.26
–1.68
–1.53
–1.29
–1.13
–0.94
–0.70
–0.17
0.15
0.09
–0.24
–0.48
–1.43
–2.60
–3.60
–18.00
–15.57
–14.69
–13.31
–12.23
–11.09
–10.33
–9.49
–8.84
–8.19
–7.66
–7.19
–6.76
–6.40
–6.06
–5.61
–5.31
–4.73
–4.30
–3.90
–3.82
–3.67
–3.65
–3.56
–3.47
–3.27
–3.09
–3.15
–3.31
–3.42
–4.00
–4.72
–5.38
–37.95
–34.65
–32.43
–30.17
–28.13
–26.37
–24.99
–23.51
–22.26
–21.17
–19.85
–18.62
–17.60
–16.82
–16.18
–15.56
–15.03
–14.41
–13.78
–13.20
–12.86
–12.68
–12.75
–12.88
–13.21
–13.51
–13.65
–13.95
–14.06
–14.06
–14.34
–14.76
–15.08
–36.77
–34.03
–31.68
–29.75
–28.14
–26.30
–24.83
–23.31
–22.06
–20.87
–19.67
–18.54
–17.59
–16.81
–16.03
–15.61
–14.94
–14.28
–13.72
–13.21
–12.82
–12.69
–12.71
–12.86
–13.13
–13.33
–13.66
–13.92
–14.00
–14.05
–14.24
–14.60
–15.09
27.53
16.79
13.52
10.24
8.39
6.41
5.35
4.40
3.82
3.27
2.94
2.69
2.48
2.30
2.11
1.97
1.83
1.64
1.52
1.43
1.41
1.38
1.37
1.35
1.33
1.28
1.27
1.27
1.30
1.32
1.44
1.63
1.87
–0.027
–0.001
–0.015
0.019
0.019
0.011
0.011
0.024
0.028
0.025
0.029
0.034
0.041
0.038
0.041
0.036
0.035
0.038
0.039
0.044
0.049
0.051
0.041
0.044
0.039
0.023
0.025
0.025
0.024
0.030
0.028
0.027
0.024
–32.707
–37.496
–35.198
–36.355
–38.318
–39.156
–43.704
–41.071
–38.980
–36.002
–38.253
–44.914
–52.360
–43.933
–38.048
–45.414
–41.367
–36.934
–40.336
–41.533
–46.170
–40.248
–43.093
–43.034
–32.688
–31.483
–40.622
–38.265
–39.573
–46.013
–37.600
–33.228
–44.662
15.95
14.90
13.63
12.79
11.90
11.45
10.95
10.45
9.93
9.66
8.95
8.11
7.48
6.94
6.65
6.36
6.22
6.34
6.26
6.28
6.04
6.14
6.20
6.27
6.62
7.15
7.39
7.51
7.50
7.22
6.51
5.85
5.47
3.98
4.17
4.18
4.19
4.18
4.13
4.11
4.09
4.11
4.09
4.15
4.35
4.48
4.71
4.83
5.07
5.13
5.22
5.27
5.25
5.29
5.25
5.43
5.68
5.89
6.19
6.42
6.52
6.32
6.35
6.40
6.31
6.01
相關(guān)PDF資料
PDF描述
NE3210S01-T1 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
NE3210S01-T1B X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
NE32500 Super Low Noise Amplifier N-Channel HJ-FET(超低噪聲放大器N溝道結(jié)型場效應(yīng)管)
NE32584C-T1 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32584C Super Low Noise Amplifier N-Channel HJ-FET(超低噪聲放大器N溝道結(jié)型場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE3210S01-A 功能描述:MOSFET Super Lo Noise HJFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NE3210S01-T1 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR HFET
NE3210S01-T1-A 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR HFET
NE3210S01-T1B 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE3210S01-T1B-A 功能描述:MOSFET Super Lo Noise HJFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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