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參數(shù)資料
| 型號： | NE3210S01 |
| 廠商： | NEC Corp. |
| 英文描述： | Low Noise Amplifier N-Channel HJ-FET(低噪聲N溝道結型場效應管) |
| 中文描述： | 低噪聲放大器N溝道黃建忠場效應管（低噪聲?溝道結型場效應管） |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 62K |
| 代理商： | NE3210S01 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3210S01
X to Ku BAND SUPER LOW NOISE AMPLIFER
N-CHANNEL HJ-FET
Document No. P14067EJ2V0DS00 (2nd edition)
Date Published November 1999 N CP(K)
Printed in Japan
DATA SHEET
1999
The mark shows major revised points.
DESCRIPTION
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
Gate Length: Lg
≤
0.20
μ
m
Gate Width : Wg = 160
μ
m
ORDERING INFORMATION (PLAN)
Part Number
Supplying Form
Marking
NE3210S01-T1
Tape & reel 1 000 pcs./reel
NE3210S01-T1B
Tape & reel 4 000 pcs./reel
K
Remark
For sample order, please contact your local NEC sales office. (Part number for sample order: NE3210S01)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
V
DS
4.0
V
Gate to Source Voltage
V
GS
–3.0
V
Drain Current
I
D
IDSS
mA
Gate Current
I
G
100
μ
A
Total Power Dissipation
P
tot
165
mW
Channel Temperature
T
ch
125
°C
Storage Temperature
T
stg
–65 to +125
°C
RECOMMENDED OPERATING CONDITIONS (T
A
= +25°C)
Characteristics
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
1
2
3
V
Drain Current
I
D
5
10
15
mA
Input Power
P
in
–
–
0
dBm
相關PDF資料 |
PDF描述 |
|---|---|
| NE3210S01-T1 | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| NE3210S01-T1B | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET |
| NE32500 | Super Low Noise Amplifier N-Channel HJ-FET(超低噪聲放大器N溝道結型場效應管) |
| NE32584C-T1 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE32584C | Super Low Noise Amplifier N-Channel HJ-FET(超低噪聲放大器N溝道結型場效應管) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NE3210S01-A | 功能描述:MOSFET Super Lo Noise HJFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NE3210S01-T1 | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR HFET |
| NE3210S01-T1-A | 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR HFET |
| NE3210S01-T1B | 功能描述:射頻GaAs晶體管 Super Lo Noise HJFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE3210S01-T1B-A | 功能描述:MOSFET Super Lo Noise HJFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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