參數(shù)資料
型號(hào)： NE25139U73
廠商： NEC Corp.
英文描述： GENERAL PURPOSE DUAL-GATE GaAS MESFET
中文描述： 一般用途的雙柵GaAs MESFET
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 54K
代理商： NE25139U73
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DS
Drain to Source Voltage
V
13
V
G1S
Gate 1 to Source Voltage
V
-4.5
V
G2S
Gate 2 to Source Voltage V -4.5
I
D
Drain Current mA I
DSS
P
T
Total Power Dissipation
mW
200
T
CH
Channel Temperature
°
C
125
T
STG
Storage Temperature
°
C
-55 to +125
Note:
1. Operation in excess of anyone of these parameters may result
in permanent damage.
Ambient Temperature, T
A
(
°
C)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
F
F
|
T
T
Drain Current, I
D
(mA)
NE25139
(V
DS
= 5 V, V
G2S
= 0 V, I
DS
= 10 mA)
FREQ.
(GHz)
NF
OPT
(dB)
G
A
(dB)
Γ
OPT
MAG
ANG
Rn/50
0.5
0.9
18.5
0.9
18
1.9
0.9
1.2
16.0
0.82
28
1.2
1.5
1.5
14.6
0.71
45
0.9
2.0
1.9
12.5
0.55
75
0.67
3.0
2.5
11.0
0.34
116
0.5
4.0
3.3
9.5
0.25
154
0.4
TYPICAL NOISE PARAMETERS
(T
A
= 25
°
C)
D
D
250
200
150
100
50
0
0 25 50 75 100 125
FREE AIR
Gate 1 to Source Voltage, V
G1S
(V)
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
F
F
|
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
30
20
10
0
0 10 20 30
V
G2S
= 1.0 V
V
G2S
= 0.5 V
V
DS
= 5 V
f = 1 kHz
Gate 1 to Source Voltage, V
G1S
(V)
30
20
10
0
-2.0 -1.0 0 +1.0
0.5 V
0 V
-0.5 V
V
G2S
= 1.0V
V
DS
= 5V
30
20
10
0
-1.0 0 +1.0
0 V
V
G2S
= 1.0
0.5 V
-0.5 V
V
DS
= 5V
f = 1kHz
-2.0
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