參數(shù)資料
型號： NE25139U73
廠商： NEC Corp.
英文描述： GENERAL PURPOSE DUAL-GATE GaAS MESFET
中文描述： 一般用途的雙柵GaAs MESFET
文件頁數(shù)： 1/7頁
文件大?。?/td> 54K
代理商： NE25139U73
PART NUMBER
PACKAGE OUTLINE
NE25139
39
SYMBOL
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
D
= 10
μ
A
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
μ
A
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
μ
A
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
Gate 2 Reverse Current at V
DS
= 0, V
G2S
= -4V, V
G1S
= 0
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1.0 kHz
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1 MHz
dB
1.1
2.5
G
PS
dB
16
20
BV
DSX
V
13
5
I
DSS
mA
20
40
V
G1S (OFF)
V
-3.5
V
G2S (OFF)
V
μ
A
μ
A
-3.5
I
G1SS
I
G2SS
|Y
FS
|
10
10
mS
18
25
35
C
ISS
pF
0.5
1.0
1.5
C
RSS
pF
0.02
0.03
FEATURES
SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
LOW C
RSS
:
0.02 pF (TYP)
HIGH GPS:
20 dB (TYP) AT 900 MHz
L
G1
= 1.0
μ
m, L
G2
= 1.5
μ
m, W
G
= 400
μ
m
ION IMPLANTATION
LOW NF:
1.1 dB TYP AT 900 MHz
AVAILABLE IN TAPE & REEL OR BULK
P
P
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
Drain to Source Voltage, V
DS
(V)
N
)
GENERAL PURPOSE
DUAL-GATE GaAS MESFET
NE25139
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
California Eastern Laboratories
20
0
10
0 5 10
0
10
G
PS
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
I
D
= 10 mA
f = 900 MHz
5
NF
相關(guān)PDF資料
PDF描述
NE25139U74 GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE25337 GENERAL PURPOSE DUAL-GATE GaAs MESFET
NE25339 GENERAL PURPOSE DUAL-GATE GaAs MESFET
NE25339-T1 GENERAL PURPOSE DUAL-GATE GaAs MESFET
NE3002-VA10A Near edge thermal printhead (300 dots / inch)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE25139U74 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAS MESFET
NE2515-06 制造商:TE Connectivity 功能描述:RIBBON CABLE, DB15 MALE/FEMALE 15WAY, 6IN, Cable Assembly Type:Ribbon, Connector
NE2515-06-ROHS 制造商:TE Connectivity 功能描述:RIBBON CABLE DB15 MALE/FEMALE 15WAY 6I 制造商:TE Connectivity 功能描述:RIBBON CABLE, DB15 MALE/FEMALE 15WAY, 6I 制造商:TE Connectivity / AMP 功能描述:RIBBON CABLE, DB15 MALE/FEMALE 15WAY, 6IN; Cable Length - Imperial:6"; Cable Length - Metric:152.4mm; Connector Type A:D Sub 15 Position Plug; Connector Type B:D Sub 15 Position Receptacle; Jacket Color:-; Cable Assembly Type:Ribbon ;RoHS Compliant: Yes
NE2525-06-ROHS 制造商:TE Connectivity 功能描述:RIBBON CABLE DB25 MALE/FEMALE 25WAY 6I 制造商:TE Connectivity / AMP 功能描述:RIBBON CABLE, DB25 MALE/FEMALE 25WAY, 6IN; No. of Conductors:25; Cable Length - Imperial:6"; Cable Length - Metric:152.4mm; Connector Type A:D Sub 25 Position Plug; Connector Type B:D Sub 25 Position Receptacle; Jacket Color:- ;RoHS Compliant: Yes 制造商:TE Connectivity / AMP 功能描述:RIBBON CABLE, DB25 MALE/FEMALE 25WAY, 6IN; No. of Conductors:25; Cable Length - Imperial:6"; Cable Length - Metric:152.4mm; Connector Type A:D Sub 25 Position Plug; Connector Type B:D Sub 25 Position Receptacle; Cable Length:6" ;RoHS Compliant: Yes
NE25337 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE DUAL-GATE GaAs MESFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*