參數(shù)資料
型號(hào)： NE25339-T1
廠商： NEC Corp.
英文描述： GENERAL PURPOSE DUAL-GATE GaAs MESFET
中文描述： 一般用途的雙柵GaAs MESFET
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 48K
代理商： NE25339-T1
FEATURES
SUITABLE FOR USE AS RF AMPLIFIER AND
MIXER IN UHF APPLICATIONS
LOW CRSS:
0.02 pF (TYP)
HIGH GPS:
20 dB (TYP) AT 900 MHz
L
G1
= 1.0
μ
m, L
G2
= 1.5
μ
m, W
G
= 800
μ
m
ION IMPLANTATION
LOW NF:
1.1 dB TYP AT 900 MHz
AVAILABLE IN TAPE & REEL OR BULK
GENERAL PURPOSE
DUAL-GATE GaAs MESFET
NE25339
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 1 V, I
DS
= 10 mA, f = 900 MHz
N
PART NUMBER
PACKAGE OUTLINE
NE25339
39
SYMBOL
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
DS
= 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
DS
= 20
μ
A
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
μ
A
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
μ
A
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
Gate 2 Reverse Current at V
DS
= 0. V
G2S
= -4V, V
G1S
= 0
μ
A
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
DS
= 10 mA, f = 1.0 kHz
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
DS
= 10 mA, f = 1 MHz
dB
1.1
2.5
G
PS
dB
16
20
BV
DSX
V
10
10
I
DSS
mA
40
80
V
G1S (OFF)
V
-3.5
V
G2S (OFF)
V
μ
A
-3.5
10
10
I
G1SS
I
G2SS
|Y
FS
|
mS
25
35
C
ISS
pF
1.0
1.5
2.0
C
RSS
pF
0.02
0.035
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
DESCRIPTION
The NE253 is an 800
μ
m dual gate GaAs FET designed to
provide flexibility in its application as a mixer, AGC amplifier,
or low noise amplifier. As an example, by shorting the second
gate to the source, higher gain can be realized than with single
gate MESFETs. This device is available in a mini-mold (sur-
face mount) package.
P
P
Drain to Source Voltage, V
DS
(V)
California Eastern Laboratories
G
PS
NF
0 5 10
0
10
20
0
5
10
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