參數(shù)資料
型號(hào): NE25339-T1
廠商: NEC Corp.
英文描述: GENERAL PURPOSE DUAL-GATE GaAs MESFET
中文描述: 一般用途的雙柵GaAs MESFET
文件頁(yè)數(shù): 2/6頁(yè)
文件大小: 48K
代理商: NE25339-T1
250
200
150
100
50
0
0 25 50 75 100 125
FREE
AIR
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
Gate 1 to Source Voltage, V
G1S
(V)
Ambient Temperature, T
A
(
°
C)
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
80
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
80
Gate 1 to Source Voltage, V
G1S
(V)
F
F
|
40
0 50 100
V
DS
= 5 V
f = 1kHz
V
GS2
= 1 V
0.5 V
0 V
-0.5 V
0
D
D
T
T
40
0
-1.8 -1.2 -0.6 0 +0.6 +1.2
V
DS
= 5 V
f = 1 kHz
V
G2S
= 1 V
0.5 V
0
-0.5 V
F
F
|
Drain Current, I
D
(mA)
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
DSX
Drain to Source Voltage
V
10
V
G1S
Gate 1 to Source Voltage
V
-4.5
V
G2S
Gate 2 to Source Voltage
V
-4.5
I
D
Drain Current
mA
80
T
CH
Channel Temperature
°
C
125
T
STG
Storage Temperature
°
C
-55 to +125
P
T
Total Power Dissipation
mW
200
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°
C)
NE25339
100
50
0
1.8
-1.2
-0.6
0
+0.6
+1.2
V
DS
= 5 V
V
G2S
= 1 V
0.5 V
-0.5 V
-1.0 V
0 V
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