參數(shù)資料
型號： NDS8961
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 3.1 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： SO-8
文件頁數(shù)： 4/10頁
文件大?。?/td> 331K
代理商： NDS8961
NDS8961 Rev.D
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
V , DRAIN-SOURCE VOLTAGE (V)
I
D
4.0
4.5
3.5
V =10V
5.0
3.0
6.0
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
D
R
D
V = 10V
I = 3.1A
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1
1.1
1.2
G
V
t
I = 250μA
V = V
GS
0
2
4
6
8
10
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
V = 3.5V
R
D
5.5
7.0
4.0
4.5
5.0
6.0
8.0
10
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
V = 10V
J
25°C
-55°C
R
D
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with
Temperature.
1
2
3
4
5
6
0
2
4
6
8
10
V , GATE TO SOURCE VOLTAGE (V)
I
25°C
125°C
V = 10V
D
J
相關(guān)PDF資料
PDF描述
NDS9400 Single P-Channel Enhancement Mode Field Effect Transistor
NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor
NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor
NDS9410S Single N-Channel Enhancement Mode Field Effect Transistor
NDS9410 Single N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8961_F011 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8963 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9400 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9400A 功能描述:MOSFET Sgl P-Ch Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS9400A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SO-8
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