參數(shù)資料
型號(hào)： NDS8947
廠(chǎng)商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： Dual P-Channel Enhancement Mode Field Effect Transistor
中文描述： 2 CHANNEL, Si, POWER, FET
封裝： SO-8
文件頁(yè)數(shù)： 6/10頁(yè)
文件大?。?/td> 331K
代理商： NDS8947
NDS8947.SAM
Typical Thermal Characteristics
0
0.1
2oz COPPER MOUNTING PAD AREA (in )
0.2
0.3
0.4
2
0.5
2
2.5
3
3.5
4
4.5
-
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
V = -10V
D
Figure 13. Maximum Steady- State Drain
Current versus Copper Mounting Pad
Area.
0.1
0.2
0.5
1
2
5
10
30
50
0.01
0.05
0.1
0.5
1
5
10
20
50
- V , DRAIN-SOURCE CURRENT (V)
-
D
10ms
100ms
1s
10s
DC
100us
1ms
RDS(ON) LIMIT
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
Figure 14. Maximum Safe Operating Area.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
S
1c
1b
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
Power for Single Operation
Total Power for Dual Operation
1a
Figure 12. SO-8 Dual Package Maximum
Steady-State Power Dissipation versus
Copper Mounting Pad Area.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 15. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
相關(guān)PDF資料
PDF描述
NDS8958 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS9400 Single P-Channel Enhancement Mode Field Effect Transistor
NDS9400A Single P-Channel Enhancement Mode Field Effect Transistor
NDS9407 Single P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8947 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8
NDS8947_Q 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8958 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8958 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SO-8
NDS8958_Q 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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