參數(shù)資料
型號(hào)： NDS8839H
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： 小信號(hào)晶體管
英文描述： Complementary MOSFET Half Bridge
中文描述： 5700 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： SOIC-8
文件頁(yè)數(shù)： 8/12頁(yè)
文件大?。?/td> 350K
代理商： NDS8839H
NDS8839H Rev. A1
Typical Thermal Characteristics
0.1
0.2
0.5
V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.05
0.1
0.5
1
5
10
20
50
I
D
1s
100ms
10s
DC
10ms
RDS(ON) LIMIT
1ms
100us
V = 10V
SINGLE PULSE
R = See Note 1c
T = 25°C
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.05
0.1
0.5
1
5
10
20
50
-
D
1s
100ms
10s
DC
10ms
RDS(ON) LIMIT
1ms
100us
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
Figure 26. N-Ch Maximum Safe Operating
Area
.
Figure 27. P-Ch Maximum Safe Operating
Area
.
0
0.2
0.4
0.6
0.8
2
1
2
3
4
5
6
2oz COPPER MOUNTING PAD AREA (in )
I
D
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
A
Still Air
V = 10V
0
0.2
0.4
0.6
0.8
2
1
2
3
4
5
6
2oz COPPER MOUNTING PAD AREA (in )
-
1c
1b
1a
4.5"x5" FR-4 Board
o
T = 25 C
Still Air
V = -10V
D
Figure 24. N-Ch Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
Figure 25. P-Ch Maximum Steady-State Drain
Current versus Copper Mounting Pad Area.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1c
T - T = P * R (t)
P(pk)
t
1
t
2
Figure 28. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
相關(guān)PDF資料
PDF描述
NDS8852H Complementary MOSFET Half Bridge
NDS8858H Complementry MOSFET Half Bridge
NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor
NDS8934 Dual P-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8852H 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8858H 功能描述:MOSFET CMOSFET Half Bridge RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8858H 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8926 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8928 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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