參數(shù)資料
型號(hào): NDS8434A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: Single P-Channel Enhancement Mode Field Effect Transistor
中文描述: 7800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SOIC-8
文件頁(yè)數(shù): 4/10頁(yè)
文件大小: 329K
代理商: NDS8434A
NDS8434A Rev.D
-2
-1.5
-1
-0.5
V , DRAIN-SOURCE VOLTAGE (V)
0
-30
-25
-20
-15
-10
-5
0
I
D
V = -4.5V
-2.0
-1.5
-3.0
-2.5
-30
-24
-18
-12
-6
0
0.8
1
1.2
1.4
1.6
1.8
I , DRAIN CURRENT (A)
D
V =-2.0V
R
D
-2.7
-2.5
-3.5
-4.5
-3.0
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage
.
Typical Electrical Characteristics
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
D
R
D
V = -4.5V
I = -7.9A
-30
-25
-20
-15
-10
I , DRAIN CURRENT (A)
-5
0
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
D
R
D
V = -4.5V
GS
J
25°C
-55°C
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Drain Current and Temperature
.
-2
-1.5
-1
-0.5
V , GATE TO SOURCE VOLTAGE (V)
0
-25
-20
-15
-10
-5
0
I
V = -5 V
DS
D
TJ
125°C
25°C
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1
1.2
1.4
G
V
G
I =-250μA
V = V
GS
Figure 5. Transfer Charateristics
.
Figure 6. Gate Threshold Variation
with Temperature
.
相關(guān)PDF資料
PDF描述
NDS8434 Single P-Channel Enhancement Mode Field Effect Transistor
NDS8435A Single P-Channel Enhancement Mode Field Effect Transistor
NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor
NDS8839H Complementary MOSFET Half Bridge
NDS8852H Complementary MOSFET Half Bridge
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDS8434A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8434A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8
NDS8434A_NL 功能描述:MOSFET 20V P-CH. FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8435 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDS8435A 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube