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參數(shù)資料
| 型號： | NDP710AE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 42 A, 100 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 74K |
| 代理商： | NDP710AE |
NDP710.SAM
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
D
I = 250μA
B
D
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01
0.1
1
10
30
V , BODY DIODE FORWARD VOLTAGE (V)
I
V = 0V
TJ
25°C
-55°C
S
0
40
80
120
160
0
5
10
15
20
Q , GATE CHARGE (nC)
V
G
I = 42A
V = 20V
80
50
0.1
0.2
0.5
1
2
5
10
20
50
100
200
300
1000
2000
3000
6000
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Figure 36. Switching Test Circuit.
Figure 12. Switching Waveforms.
Typical Electrical Characteristics
(continued)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDP710B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP710BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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