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參數(shù)資料
| 型號(hào)： | NDP710AE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 42 A, 100 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 74K |
| 代理商： | NDP710AE |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
E
AS
Single Pulse Drain-Source
Avalanche Energy
I
AR
Maximum Drain-Source Avalanche Current
V
DD
= 25 V, I
D
= 42 A
NDP710AE
NDP710BE
NDB710AE
NDB710BE
700
mJ
42
A
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 250 μA
ALL
100
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 100 V,
V
GS
= 0 V
ALL
250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
ALL
100
nA
Gate - Body Leakage, Reverse
ALL
-100
nA
V
DS
= V
,
I
D
= 250 μA
ALL
2
2.9
2.2
4
V
V
T
J
= 125°C
1.4
3.6
R
DS(ON)
Static Drain-Source
On-Resistance
V
GS
= 10 V,
I
D
= 21 A
NDP710A
NDP710AE
NDB710A
NDB710AE
0.026
0.038
T
J
= 125°C
0.044
0.08
V
GS
= 10 V,
I
D
= 20 A
NDP710B
NDP710BE
NDB710B
NDB710BE
NDP710A
NDP710AE
NDB710A
NDB710AE
NDP710B
NDP710BE
NDB710B
NDB710BE
ALL
0.042
T
J
= 125°C
0.09
A
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
42
40
A
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Forward Transconductance
V
DS
= 10 V, I
D
= 21 A
20
28
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
2840
3600
pF
ALL
550
700
pF
ALL
175
200
pF
NDP710.SAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDP710B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP710BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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