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參數(shù)資料
| 型號(hào)： | NDP7060 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor(N溝道增強(qiáng)型場(chǎng)效應(yīng)管) |
| 中文描述： | 75 A, 60 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 360K |
| 代理商： | NDP7060 |
NDP7060.SAM
-50
-25
0
25
50
75
100
125
150
175
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
T , JUNCTION TEMPERATURE (°C)
D
V = 10V
I = 40A
R
D
-50
-25
0
25
50
75
100
125
150
175
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
G
V
G
I = 250μA
V = V
GS
0
20
40
I , DRAIN CURRENT (A)
60
80
100
120
0.5
1
1.5
2
2.5
D
V = 5.0V
R
D
5.5
8.0
7.0
6.5
6.0
10
12
20
0
20
40
I , DRAIN CURRENT (A)
60
80
100
120
0.6
0.8
1
1.2
1.4
1.6
1.8
D
J
25°C
-55°C
V = 10V
R
D
2
3
4
5
6
7
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 10V
J
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
Figure 3. On-Resistance Variation
with Temperature
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
0
1
2
3
4
5
0
20
40
60
80
100
120
V , DRAIN-SOURCE VOLTAGE (V)
I
D
8.0
V =20V
5.5
6.0
6.5
7.0
4.0
4.5
5.0
10
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| NDB710A | N-Channel Enhancement Mode Field Effect Transistor |
| NDP710A | N-Channel Enhancement Mode Field Effect Transistor |
| NDP710AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP710B | N-Channel Enhancement Mode Field Effect Transistor |
| NDP710BE | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDP7060L | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP7061 | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP7061_Q | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP7061L | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP708A | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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