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參數(shù)資料
| 型號： | NDP7060 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor(N溝道增強(qiáng)型場效應(yīng)管) |
| 中文描述： | 75 A, 60 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 360K |
| 代理商： | NDP7060 |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
Maximum Continuos Drain-Source Diode Forward Current
75
A
Maximum Pulsed Drain-Source Diode Forward Current
225
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 37.5 A
(
Note 1)
0.9
1.3
V
T
J
= 125°C
0.84
1.2
t
rr
I
rr
THERMAL CHARACTERISTICS
Reverse Recovery Time
V
GS
= 0 V, I
F
= 75 A, dI
F
/dt = 100 A/μs
40
76
150
ns
Reverse Recovery Current
2
4.7
10
A
R
θ
JC
R
θ
JA
Note:
1. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case
1
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
NDP7060.SAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDP7060L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP7061 | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP7061_Q | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP7061L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP708A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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