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參數資料
| 型號： | NDP6051 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 48 A, 50 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數： | 4/6頁 |
| 文件大?。?/td> | 67K |
| 代理商： | NDP6051 |
NDP6051 Rev. C1
0
1
2
3
4
5
0
20
40
60
80
100
V , DRAIN-SOURCE VOLTAGE (V)
I
V = 12V
D
6.0
7.0
8.0
10
9.0
5.0
-50
-25
0
25
50
75
100
125
150
175
0.5
0.75
1
1.25
1.5
1.75
2
T , JUNCTION TEMPERATURE (°C)
D
V = 10V
I = 24A
R
D
-50
-25
0
25
50
75
100
125
150
175
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
T , JUNCTION TEMPERATURE (°C)
G
V
G
I = 250μA
V = V
GS
0
20
40
60
80
100
0.5
1
1.5
2
2.5
I , DRAIN CURRENT (A)
D
R
D
V = 6.0V
9.0
10
8.0
12
7.0
0
20
40
60
80
100
0.5
0.75
1
1.25
1.5
1.75
2
2.25
2.5
I , DRAIN CURRENT (A)
D
V = 10V
J
25°C
-55°C
R
D
2
4
6
8
10
0
10
20
30
40
50
60
V , GATE TO SOURCE VOLTAGE (V)
I
D
25°C
125°C
V = 10V
J
Typical Electrical Characteristics
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
Figure 3. On-Resistance Variation
with Temperature
.
Figure 4. On-Resistance Variation with Drain
Current and Temperature
.
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation With
Temperature
.
相關PDF資料 |
PDF描述 |
|---|---|
| NDB6051 | N-Channel Enhancement Mode Field Effect Transistor |
| NDP605A | N-Channel Enhancement Mode Power Fleid Effect Transistor |
| NDP605B | N-Channel Enhancement Mode Power Fleid Effect Transistor |
| NDP606A | N-Channel Enhancement Mode Power Fleid Effect Transistor |
| NDP606B | N-Channel Enhancement Mode Power Fleid Effect Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NDP6051L | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDP605A | 制造商:Texas Instruments 功能描述: |
| NDP605B | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:N-Channel Enhancement Mode Power Fleid Effect Transistor |
| NDP605BEL | 制造商:Texas Instruments 功能描述: |
| NDP6060 | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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