參數(shù)資料
型號： NDP6030
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： 46 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220, 3 PIN
文件頁數(shù)： 2/4頁
文件大小： 56K
代理商： NDP6030
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note)
W
DSS
I
AR
OFF CHARACTERISTICS
Single Pulse Drain-Source Avalanche Energy
V
DD
= 15 V, I
D
= 46 A
100
mJ
Maximum Drain-Source Avalanche Current
46
A
BV
DSS
BV
DSS
/
T
J
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
I
D
= 250 μA, Referenced to 25
o
C
30
V
Breakdown Voltage Temp. Coefficient
30
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= 24 V, V
GS
= 0 V
10
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
/
T
J
V
GS(th)
Gate Threshold VoltageTemp. Coefficient
I
D
= 250 μA, Referenced to 25
o
C
-6
mV/
o
C
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
2
2.3
4
V
T
J
= 125°C
1.4
1.7
2.8
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 23 A
0.014
0.018
T
J
= 125°C
0.019
0.032
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 23 A
60
A
Forward Transconductance
22
S
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1165
pF
915
pF
385
pF
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 46 A,
V
GS
= 10 V, R
GEN
= 11
9
18
nS
t
r
t
D(off)
Turn - On Rise Time
103
200
nS
Turn - Off Delay Time
40
80
nS
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS
Turn - Off Fall Time
98
200
nS
Total Gate Charge
V
=15 V,
I
D
= 46 A, V
GS
= 10 V
34
47
nC
Gate-Source Charge
7
nC
Gate-Drain Charge
13
nC
I
S
I
SM
V
SD
Note: Pulse Test: Pulse Width < 300 μs, Duty Cycle < 2.0%.
Maximum Continuos Drain-Source Diode Forward Current
46
A
Maximum Pulsed Drain-Source Diode Forward Current
135
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 23 A
(Note)
0.9
1.3
V
NDP6030.RevB
相關(guān)PDF資料
PDF描述
NDP6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB6030 N-Channel Enhancement Mode Field Effect Transistor（46A,30V，0.018Ω）(N溝道增強型MOS場效應管（漏電流46A, 漏源電壓30V，導通電阻0.018Ω）)
NDP603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDP6030L 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030PL 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6030PL_Q 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP603AL 功能描述:MOSFET N-Channel FET LL Enhancement RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDP6050 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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