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參數(shù)資料
| 型號： | NDB603AL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 25 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 65K |
| 代理商： | NDB603AL |
January 1996
NDP603AL / NDB603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
______________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP603AL
NDB603AL
Units
V
DSS
V
GSS
Drain-Source Voltage
30
V
Gate-Source Voltage - Continuous
± 20
V
I
D
Drain Current
- Continuous
25
(Note 1)
A
- Pulsed
100
P
D
Total Power Dissipation @ T
C
= 25
°
C
50
W
Derate above 25
°
C
0.4
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
2.5
°C/W
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
NDP603AL.SAM
These N-Channel logic level enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. These devices are
particularly suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
25A, 30V. R
DS(ON)
= 0.022
@ V
GS
=10V
.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
High density cell design for extremely low R
DS(ON)
.
175°C maximum junction temperature rating.
S
D
G
1997 Fairchild Semiconductor Corporation
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