參數(shù)資料
型號(hào): NDB603AL
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor
中文描述: 25 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 65K
代理商: NDB603AL
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 2)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 15 V, I
D
= 25 A
100
mJ
I
AR
OFF CHARACTERISTICS
Maximum Drain-Source Avalanche Current
25
A
BV
DSS
I
DSS
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
30
V
Zero Gate Voltage Drain Current
10
μA
Gate - Body Leakage, Forward
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1.1
1.5
3
V
T
J
= 125
o
C
0.7
1.1
2.2
V
DS
= V
GS
, I
D
= 10 mA
1.4
1.85
3
T
J
= 125
o
C
1
1.5
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 25 A
0.019
0.022
T
J
= 125
o
C
0.028
0.045
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 4.5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 25 A
0.031
0.04
I
D(on)
On-State Drain Current
60
A
15
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
18
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1100
pF
Output Capacitance
540
pF
Reverse Transfer Capacitance
175
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= 15 V, I
D
= 25 A,
V
GS
= 10 V, R
GEN
= 24
15
30
ns
Turn - On Rise Time
70
110
ns
Turn - Off Delay Time
90
150
ns
Turn - Off Fall Time
80
130
ns
Total Gate Charge
V
= 10 V,
I
D
= 25 A, V
GS
= 10 V
28
40
nC
Gate-Source Charge
5
7
nC
Gate-Drain Charge
7
10
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
25
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 25 A
(Note 2)
1.3
V
Note:
1. Maximum DC current limited by the package.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDP603AL.SAM
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