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參數(shù)資料
| 型號： | NDH8304P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor（-2.7A，-20V，0.07Ω）(雙P溝道增強型場效應管（漏電流-2.7A, 漏源電壓-20V，導通電阻0.07Ω）) |
| 中文描述： | 2700 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SUPERSOT-8 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 70K |
| 代理商： | NDH8304P |
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
-0.67
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.67 A
(Note 2)
-0.7
-1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
JA
(
t
)
=
T
J
T
A
R
θ
JC
+
R
θ
CA
(
t
)
=
I
D
2
(
t
) ×
R
DS
(
ON
)
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
156
o
C/W when mounted on a 0.0025 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDH8304P Rev.C
相關PDF資料 |
PDF描述 |
|---|---|
| NDH831N | N-Channel Enhancement Mode Field Effect Transistor（5.8A，20V，0.03Ω）(N溝道增強型MOS場效應管（漏電流5.8A, 漏源電壓20V，導通電阻0.03Ω）) |
| NDH8320C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流3A, 漏源電壓20V，導通電阻0.06Ω；P溝道：漏電流-2A, 漏源電壓-20V，導通電阻0.13Ω）) |
| NDH8321C | Dual N & P-Channel Enhancement Mode Field Effect Transistor(雙N溝道和P溝道增強型場效應管(N溝道：漏電流3.8A, 漏源電壓20V，導通電阻0.035Ω；P溝道：漏電流-2.7A, 漏源電壓-20V，導通電阻0.07Ω）) |
| NDH832P | P-Channel Enhancement Mode Field Effect Transistor（-4.2A，-20V，0.06Ω）(P溝道增強型MOS場效應管（漏電流-4.2A, 漏源電壓-20V，導通電阻0.06Ω）) |
| NDH833N | N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDH8304P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-8 |
| NDH8304P_Q | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH831N | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDH8320C | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N & P-Channel Enhancement Mode Field Effect Transistor |
| NDH8321C | 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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