- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄363243 > NDB7060L (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | NDB7060L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | NDB7060L |
June 1996
NDP7060L / NDB7060L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP7060L
NDB7060L
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
V
GSS
Gate-Source Voltage - Continuous
± 20
V
- Nonrepetitive (t
P
< 50 μs)
- Continuous
± 40
I
D
Drain Current
75
A
- Pulsed
225
P
D
Total Power Dissipation @ T
C
= 25
°
C
150
W
Derate above 25
°
C
1
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
NDP7060L Rev. B2 / NDB7060L Rev. C
S
D
G
75A, 60V. R
DS(ON)
= 0.015
@ V
GS
= 5V
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDP7061L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDB7061L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP7061 | N-Channel Enhancement Mode Field Effect Transistor |
| NDB7061 | N-Channel Enhancement Mode Field Effect Transistor |
| NDP708A | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB7061 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB7061L | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDB708A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB708AE | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB708B | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。