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參數(shù)資料
| 型號： | NDP7061L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220, 3 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 359K |
| 代理商： | NDP7061L |
June 1996
NDP7061L / NDB7061L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP7061L
NDB7061L
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
60
V
V
GSS
± 16
V
- Nonrepetitive (t
P
< 50 μs)
Drain Current
- Continuous
± 25
I
D
60
A
- Pulsed
180
P
D
Maximum Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
130
W
0.87
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
NDP7061L Rev.C1
60 A, 60 V. R
DS(ON)
= 0.018
@ V
GS
= 5 V
R
DS(ON)
= 0.013
@ V
GS
= 10 V.
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
1997 Fairchild Semiconductor Corporation
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| NDB7061L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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| NDP708A | N-Channel Enhancement Mode Field Effect Transistor |
| NDP708AE | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDP708A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP708AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP708AL | 制造商:Texas Instruments 功能描述: 制造商:National Semiconductor Corporation 功能描述:60 A, 80 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| NDP708B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDP708BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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