- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄363243 > NDB7052L (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | NDB7052L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 75 A, 50 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | NDB7052L |
May 1997
NDP7052L / NDB7052L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP7052L
NDB7052L
Units
V
DSS
Drain-Source Voltage
50
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
50
V
V
GSS
±16
V
- Nonrepetitive (t
P
< 50 μs)
Drain Current
- Continuous
±25
I
D
75
A
- Pulsed
225
P
D
Maximum Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
150
W
1
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Thermal Resistance, Junction-to-Case
1
°
C/W
Thermal Resistance, Junction-to-Ambient
62.5
°
C/W
NDP7052L Rev.B
1
75 A, 50 V. R
DS(ON)
= 0.010
@ V
GS
= 5 V
R
DS(ON)
= 0.0075
@ V
GS
= 10 V.
Low drive requirements allowing operation directly from logic
drivers. V
GS(TH)
< 2.0V.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
These logic level N-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited for
low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDP7052 | N-Channel Enhancement Mode Field Effect Transistor |
| NDB7052 | N-Channel Enhancement Mode Field Effect Transistor |
| NDP7060L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDB7060L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDP7061L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB7060 | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB7060L | 功能描述:MOSFET N-CH 60V 75A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| NDB7061 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB7061L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| NDB708A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。