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參數(shù)資料
| 型號(hào)： | NDB6060 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 48 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 360K |
| 代理商： | NDB6060 |
March 1996
NDP6060 / NDB6060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP6060
NDB6060
Units
V
DSS
V
DGR
Drain-Source Voltage
60
V
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
V
GSS
Gate-Source Voltage - Continuous
± 20
V
- Nonrepetitive (t
P
< 50 μs)
- Continuous T
c
=25
o
C
- Continuous T
C
=100
o
C
- Pulsed
± 40
I
D
Drain Current
48
A
32
144
P
D
Total Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
100
W
0.67
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
275
°C
NDP6060 Rev. B1 / NDB6060 Rev. C
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line power
loss, and resistance to transients are needed.
48A, 60V. R
DS(ON)
= 0.025
@ V
GS
=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
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| NDP610BE | N-Channel Enhancement Mode Field Effect Transistor（24A，100V，0.080Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流24A, 漏源電壓100V，導(dǎo)通電阻0.080Ω）) |
| NDB610A | N-Channel Enhancement Mode Field Effect Transistor |
| NDB610AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDB610B | N-Channel Enhancement Mode Field Effect Transistor |
| NDB610BE | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB6060L | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6060L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK |
| NDB6060L_Q | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB608A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB608AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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