- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363238 > NDB6050L (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Logic Level Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | NDB6050L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | 48 A, 50 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 66K |
| 代理商： | NDB6050L |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 25 V, I
D
= 48 A
200
mJ
I
AR
OFF CHARACTERISTICS
Maximum Drain-Source Avalanche Current
48
A
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 50 V, V
GS
= 0 V
50
V
Zero Gate Voltage Drain Current
250
μA
T
J
= 125°C
1
mA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 1)
Gate - Body Leakage, Forward
V
GS
= 16 V, V
DS
= 0 V
V
GS
= -16 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
2
V
T
J
= 125°C
0.65
1.5
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 5 V, I
D
= 24 A
0.025
T
J
= 125°C
0.04
V
GS
= 10 V, I
D
= 24 A
V
GS
= 5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 24 A
0.02
I
D(on)
g
FS
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 1)
On-State Drain Current
48
A
Forward Transconductance
10
S
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
1630
2000
pF
460
800
pF
150
400
pF
t
D(on)
Turn - On Delay Time
V
DD
= 30 V, I
D
= 48 A,
V
GS
= 5 V, R
GEN
= 15
,
R
GS
= 15
15
30
nS
t
r
t
D(off)
Turn - On Rise Time
320
500
nS
Turn - Off Delay Time
49
100
nS
t
f
Q
g
Q
gs
Q
gd
Turn - Off Fall Time
161
300
nS
Total Gate Charge
V
= 48 V,
I
D
= 48 A, V
GS
= 5 V
36
60
nC
Gate-Source Charge
8.2
nC
Gate-Drain Charge
21
nC
NDP6050L Rev. C / NDB6050L Rev. D
相關PDF資料 |
PDF描述 |
|---|---|
| NDP6050L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道邏輯增強型MOS場效應管（漏電流48A, 漏源電壓50V，導通電阻0.025Ω）) |
| NDB6050 | N-Channel Enhancement Mode Field Effect Transistor |
| NDP6050 | N-Channel Enhancement Mode Field Effect Transistor（48A,50V，0.025Ω）(N溝道增強型MOS場效應管（漏電流48A, 漏源電壓50V，導通電阻0.025Ω）) |
| NDB608A | N-Channel Enhancement Mode Field Effect Transistor（36A，80V，0.042Ω）(N溝道增強型MOS場效應管（漏電流36A, 漏源電壓80V，導通電阻0.042Ω）) |
| NDP608A | N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDB6051 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB6051L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 48A I(D) | TO-263AB |
| NDB6060 | 功能描述:MOSFET N-CH 60V 48A TO-263AB RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NDB6060L | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6060L | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK |
發(fā)布緊急采購，3分鐘左右您將得到回復。