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參數(shù)資料
| 型號： | NDB603 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強模式的邏輯電平場效應晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 65K |
| 代理商： | NDB603 |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 2)
W
DSS
Single Pulse Drain-Source Avalanche
Energy
V
DD
= 15 V, I
D
= 25 A
100
mJ
I
AR
OFF CHARACTERISTICS
Maximum Drain-Source Avalanche Current
25
A
BV
DSS
I
DSS
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
30
V
Zero Gate Voltage Drain Current
10
μA
Gate - Body Leakage, Forward
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1.1
1.5
3
V
T
J
= 125
o
C
0.7
1.1
2.2
V
DS
= V
GS
, I
D
= 10 mA
1.4
1.85
3
T
J
= 125
o
C
1
1.5
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 25 A
0.019
0.022
T
J
= 125
o
C
0.028
0.045
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, V
DS
= 10 V
V
GS
= 4.5 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 25 A
0.031
0.04
I
D(on)
On-State Drain Current
60
A
15
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
18
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15 V, V
GS
= 0 V,
f = 1.0 MHz
1100
pF
Output Capacitance
540
pF
Reverse Transfer Capacitance
175
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - On Delay Time
V
DD
= 15 V, I
D
= 25 A,
V
GS
= 10 V, R
GEN
= 24
15
30
ns
Turn - On Rise Time
70
110
ns
Turn - Off Delay Time
90
150
ns
Turn - Off Fall Time
80
130
ns
Total Gate Charge
V
= 10 V,
I
D
= 25 A, V
GS
= 10 V
28
40
nC
Gate-Source Charge
5
7
nC
Gate-Drain Charge
7
10
nC
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
25
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 25 A
(Note 2)
1.3
V
Note:
1. Maximum DC current limited by the package.
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDP603AL.SAM
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| NDB6030PL | 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB603AL | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB6050 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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