參數(shù)資料
型號(hào)： NDB510BE
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Field Effect Transistor
中文描述： 13 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 3/6頁
文件大小： 72K
代理商： NDB510BE
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
t
r
t
D(OFF)
Turn - Off Delay Time
t
f
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
V
DD
= 50 V, I
D
= 15 A,
V
GS
= 10 V, R
GEN
= 24
ALL
ALL
10
63
20
100
nS
nS
Turn - On Rise Time
ALL
ALL
49
45
80
75
nS
nS
Turn - Off Fall Time
V
DS
= 80 V,
I
D
= 15 A, V
GS
= 10V
ALL
ALL
ALL
22.5
4.5
10.5
30
nC
nC
nC
NDP510A
NDP510AE
NDB510A
NDB510AE
NDP510B
NDP510BE
NDB510B
NDB510BE
NDP510A
NDP510AE
NDB510A
NDB510AE
NDP510B
NDP510BE
NDB510B
NDB510BE
ALL
15
A
13
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
60
A
52
A
V
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 7.5 A
0.89
0.85
98
1.3
1.2
140
V
V
ns
T
J
= 125°C
t
rr
I
rr
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Reverse Recovery Time
V
GS
= 0 V, I
= 15 A,
dI
S
/dt = 100 A/μs
ALL
Reverse Recovery Current
ALL
6.8
10
A
R
θ
JC
R
θ
JA
Notes:
1. NDP510A/510B and NDB510A/510B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
ALL
2
°
C/W
Thermal Resistance, Junction-to-Ambient
ALL
62.5
°
C/W
NDP510.SAM
相關(guān)PDF資料
PDF描述
NDP510AE N-Channel Enhancement Mode Field Effect Transistor
NDP510B N-Channel Enhancement Mode Field Effect Transistor
NDP510BE N-Channel Enhancement Mode Field Effect Transistor
NDB6020P P-Channel Enhancement Mode Field Effect Transistor（-24A,-20V，0.05Ω）(P溝道增強(qiáng)型MOS場效應(yīng)管（漏電流-24A, 漏源電壓-20V，導(dǎo)通電阻0.05Ω）)
NDP6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDB6020 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB6020P 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB6020P_Q 功能描述:MOSFET P-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB603 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB6030 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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