- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363238 > NDB508BE (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Enhancement Mode Field Effect Transistor（17A,80V，0.1Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流17A, 漏源電壓80V，導(dǎo)通電阻0.1Ω）) PDF資料下載
參數(shù)資料
| 型號(hào)： | NDB508BE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（17A,80V，0.1Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流17A, 漏源電壓80V，導(dǎo)通電阻0.1Ω）) |
| 中文描述： | 17 A, 80 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 73K |
| 代理商： | NDB508BE |
NDP508.SAM
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
D
I = 250μA
B
D
0.2
0.4
0.6
0.8
1
1.2
1.4
0.01
0.1
1
5
10
30
50
V , BODY DIODE FORWARD VOLTAGE (V)
I
S
V = 0V
TJ
25°C
-55°C
0
10
20
30
40
0
5
10
15
20
Q , GATE CHARGE (nC)
V
G
I = 19A
V = 12V
64
24
1
2
3
5
10
20
50
40
100
200
500
1000
1600
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
10%
50%
90%
10%
90%
90%
50%
Input, Vin
Output, Vout
t
on
t
off
t
d(off)
t
f
t
r
t
d(on)
Inverted
10%
Pulse Width
Figure 7. Breakdown Voltage
Variation with Temperature
.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature
.
Figure 9. Capacitance Characteristics
.
Figure 10. Gate Charge Characteristics
.
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms.
Typical Electrical Characteristics
(continued)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDB510A | N-Channel Enhancement Mode Field Effect Transistor |
| NDB510AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDB510B | N-Channel Enhancement Mode Field Effect Transistor |
| NDB510BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510AE | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB510A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB510AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB510B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB510BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB6020 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。