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參數(shù)資料
| 型號： | NDB508BE |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（17A,80V，0.1Ω）(N溝道增強型MOS場效應管（漏電流17A, 漏源電壓80V，導通電阻0.1Ω）) |
| 中文描述： | 17 A, 80 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 73K |
| 代理商： | NDB508BE |
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS
(Note 2)
t
D(ON)
Turn - On Delay Time
t
r
t
D(OFF)
Turn - Off Delay Time
t
f
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current
V
DD
= 40 V, I
D
= 19 A,
V
GS
= 10 V, R
GEN
= 15
ALL
ALL
8.5
66
20
110
nS
nS
Turn - On Rise Time
ALL
ALL
31
48
50
80
nS
nS
Turn - Off Fall Time
V
DS
= 64 V,
I
D
= 19 A, V
GS
= 10 V
ALL
ALL
ALL
23.5
4.5
11.8
34
nC
nC
nC
NDP508A
NDP508AE
NDB508A
NDB508AE
NDP508B
NDP508BE
NDB508B
NDB508BE
NDP508A
NDP508AE
NDB508A
NDB508AE
NDP508B
NDP508BE
NDB508B
NDB508BE
ALL
19
A
17
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
57
A
51
A
V
(Note 2)
Drain-Source Diode Forward
Voltage
V
GS
= 0 V,
I
S
= 9.5 A
0.87
0.79
78
1.3
1.2
110
V
V
ns
T
J
= 125°C
t
rr
I
rr
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Reverse Recovery Time
V
GS
= 0 V, I
= 19 A,
dI
S
/dt = 100 A/μs
ALL
Reverse Recovery Current
ALL
5.2
75
A
R
θ
JC
R
θ
JA
Notes:
1. NDP508A/508B and NDB508A/508B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%.
ALL
2
°
C/W
Thermal Resistance, Junction-to-Ambient
ALL
62.5
°
C/W
NDP508.SAM
相關PDF資料 |
PDF描述 |
|---|---|
| NDB510A | N-Channel Enhancement Mode Field Effect Transistor |
| NDB510AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDB510B | N-Channel Enhancement Mode Field Effect Transistor |
| NDB510BE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP510AE | N-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NDB510A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB510AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB510B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB510BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB6020 | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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