參數(shù)資料
型號(hào): NDB5060L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor(26A,60V,0.05Ω)(N溝道邏輯電平增強(qiáng)型MOS場(chǎng)效應(yīng)管(漏電流26A, 漏源電壓60V,導(dǎo)通電阻0.05Ω))
中文描述: 26 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: D2PAK-3
文件頁(yè)數(shù): 6/12頁(yè)
文件大小: 358K
代理商: NDB5060L
NDP5060L Rev.A
0
5
10
15
20
25
0
5
10
15
20
25
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = 5V
125°C
Figure 13. Transconductance Variation with Drain
Current and Temperature
.
Figure 14. Maximum Safe Operating Area
.
Figure 15. Transient Thermal Response Curve.
Typical Electrical Characteristics
(continued)
1
3
5
10
20
40
60
80
0.5
1
2
5
10
30
60
100
V , DRAIN-SOURCE VOLTAGE (V))
I
D
10μs
1ms
10ms
DC
R Limit
DSON
V = 5V
SINGLE PULSE
R =2.2 C/W
T = 25°C
100μs
0.1
0.5
1
10
100
1000
3000
10000
0.03
0.05
0.1
0.2
0.3
0.5
1
t ,TIME (ms)
T
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t /t
1
2
R JC
R JC
T - T = P * R (t)
P(pk)
t
1
t
2
r
相關(guān)PDF資料
PDF描述
NDP5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB5060 N-Channel Enhancement Mode Field Effect Transistor(26A,60V,0.05Ω)(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管(漏電流26A, 漏源電壓60V,導(dǎo)通電阻0.05Ω))
NDP5060 N-Channel Enhancement Mode Field Effect Transistor
NDB508A N-Channel Enhancement Mode Field Effect Transistor(19A,80V,0.08Ω)(N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管(漏電流19A, 漏源電壓80V,導(dǎo)通電阻0.08Ω))
NDP508A N-Channel Enhancement Mode Field Effect Transistor
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