參數(shù)資料
型號: NDB5060L
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level Enhancement Mode Field Effect Transistor(26A,60V,0.05Ω)(N溝道邏輯電平增強(qiáng)型MOS場效應(yīng)管(漏電流26A, 漏源電壓60V,導(dǎo)通電阻0.05Ω))
中文描述: 26 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: D2PAK-3
文件頁數(shù): 12/12頁
文件大小: 358K
代理商: NDB5060L
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ACEx
CoolFET
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E
2
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TM
FACT
FACT Quiet Series
FAST
FASTr
GTO
HiSeC
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failure to perform when properly used in accordance
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Definition
Advance Information
Preliminary
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Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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SyncFET
TinyLogic
UHC
VCX
ISOPLANAR
MICROWIRE
POP
PowerTrench
QFET
QS
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
Rev. D
相關(guān)PDF資料
PDF描述
NDP5060L N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDB5060 N-Channel Enhancement Mode Field Effect Transistor(26A,60V,0.05Ω)(N溝道增強(qiáng)型MOS場效應(yīng)管(漏電流26A, 漏源電壓60V,導(dǎo)通電阻0.05Ω))
NDP5060 N-Channel Enhancement Mode Field Effect Transistor
NDB508A N-Channel Enhancement Mode Field Effect Transistor(19A,80V,0.08Ω)(N溝道增強(qiáng)型MOS場效應(yīng)管(漏電流19A, 漏源電壓80V,導(dǎo)通電阻0.08Ω))
NDP508A N-Channel Enhancement Mode Field Effect Transistor
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