- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363238 > NDB5060 (FAIRCHILD SEMICONDUCTOR CORP) N-Channel Enhancement Mode Field Effect Transistor（26A,60V，0.05Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流26A, 漏源電壓60V，導(dǎo)通電阻0.05Ω）) PDF資料下載
參數(shù)資料
| 型號： | NDB5060 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（26A,60V，0.05Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流26A, 漏源電壓60V，導(dǎo)通電阻0.05Ω）) |
| 中文描述： | 26 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 356K |
| 代理商： | NDB5060 |
October 1996
NDP5060 / NDB5060
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise note
NDP5060
NDB5060
Units
V
DSS
Drain-Source Voltage
60
V
V
DGR
Drain-Gate Voltage (R
GS
< 1 M
)
60
V
V
GSS
Gate-Source Voltage - Continuous
±20
V
- Nonrepetitive (t
P
< 50 μs)
- Continuous
±40
I
D
Drain Current
26
A
- Pulsed
78
P
D
Total Power Dissipation @ T
C
= 25
°
C
68
W
Derate above 25
°
C
0.45
W/
°
C
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 175
°C
NDP5060 Rev.A
26 A, 60 V. R
DS(ON)
= 0.05
@ V
GS
= 10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through hole
and surface mount applications.
S
D
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDP5060 | N-Channel Enhancement Mode Field Effect Transistor |
| NDB508A | N-Channel Enhancement Mode Field Effect Transistor（19A,80V，0.08Ω）(N溝道增強(qiáng)型MOS場效應(yīng)管（漏電流19A, 漏源電壓80V，導(dǎo)通電阻0.08Ω）) |
| NDP508A | N-Channel Enhancement Mode Field Effect Transistor |
| NDP508AE | N-Channel Enhancement Mode Field Effect Transistor |
| NDP508B | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDB5060L | 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDB508A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB508AE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB508B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDB508BE | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。