參數(shù)資料
型號: NDB4050
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 0 OHM 1% 1/20W SMT (0402) CHIP RES
中文描述: 15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 5/6頁
文件大小: 66K
代理商: NDB4050
NDP4050 Rev. B
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage Variation
with Current and Temperature
.
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
Typical Electrical Characteristics
(continued)
-50
-25
0
25
50
75
100
125
150
175
0.9
0.95
1
1.05
1.1
1.15
T , JUNCTION TEMPERATURE (°C)
D
I = 250μA
B
D
0.4
0.6
V , BODY DIODE FORWARD VOLTAGE (V)
0.8
1
1.2
1.4
0.1
0.2
0.5
1
2
5
10
20
I
S
TJ
25°C
-55°C
V = 0V
0
5
10
15
20
0
5
10
15
20
Q , GATE CHARGE (nC)
V
G
I = 15A
V = 12V
24V
48V
1
2
3
5
10
20
30
60
30
50
100
200
300
500
700
V , DRAIN TO SOURCE VOLTAGE (V)
C
C ss
f = 1 MHz
V = 0V
C ss
C ss
G
D
S
V
DD
R
L
V
V
IN
OUT
V
GS
DUT
R
GEN
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms
.
10%
50%
90%
10%
90%
90%
50%
V
IN
V
OUT
on
off
d(off)
f
r
d(on)
t
t
t
t
t
t
INVERTED
10%
PULSE WIDTH
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NDB4050L 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDB4060 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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