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參數(shù)資料
| 型號： | ND2012L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Depletion-Mode MOSFET Transistors(最大漏源導通電阻12Ω，夾斷電流0.16A的N溝道耗盡型MOSFET晶體管) |
| 中文描述： | N溝道耗盡型MOSFET晶體管（最大漏源導通電阻12Ω，夾斷電流0.16A的N溝道耗盡型MOSFET的晶體管） |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | ND2012L |
ND2012L/2020L
4
Siliconix
S-52426—Rev. C, 14-Apr-97
Typical Characteristics (25 C Unless Otherwise Noted) (Cont’d)
Normalized On-Resistance
vs. Junction Temperature
2.25
100
10
1
1
100
10
V
DD
= 25 V
V
GS
= 0 to –5 V
R
G
= 25
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1
1
100
10
1 K
Forward Transconductance and Output
Conductance vs. Drain Current
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Capacitance
Load Condition Effects on Switching
N
T
t
1
– Square Wave Pulse Duration (sec)
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
C
t
t
d(on)
t
d(off)
t
r
t
f
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 156 C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
t
1
t
2
t
1
Notes:
P
DM
t
2
I
D
– Drain Current (A)
T
J
– Junction Temperature ( C)
r
D
–
(
g
f
S
g
o
–
2.00
1.75
0.50
–50
–10
150
1.50
1.25
30
70
110
1.00
0.75
V
GS
= 0 V
I
D
= 20 mA
700
300
100
500
400
200
600
350
150
50
1
10
100
1 K
250
200
100
300
0
0
V
DS
= 7.5 V
Pulse Test
80 ms, 1% Duty Cycle
120
100
80
0
60
40
20
0
10
50
20
30
40
C
iss
C
rss
C
oss
g
fs
g
os
V
GS
= –5 V
f = 1 MHz
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